Patents by Inventor Mark N. Gurnee

Mark N. Gurnee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4871921
    Abstract: Method and apparatus for providing an improved detector array assembly in which the detectors are electrically connected from one substrate to another through adjoining "bump" connections but are prevented from distortion when an epoxy joining the two substrates hardens by locating the detectors so that the epoxy does not flow adjacent to them.
    Type: Grant
    Filed: August 9, 1988
    Date of Patent: October 3, 1989
    Assignee: Honeywell Inc.
    Inventor: Mark N. Gurnee
  • Patent number: 4812668
    Abstract: A multiplexer cell particularly adapted for multiplexing the output signals of photovoltaic detectors and which when appropriately connected together form a random access multiplexer for the photovoltaic detectors located in a large focal plane of a photosensing device. Each multiplexer cell includes an input circuit to which the input signal current from a detector is applied. A charge is stored in a storage well, the magnitude of which is an integration over an integration period of the input signal from a detector. The output of the input circuit is an output voltage produced by a sensor in close proximity to the storage well. The output voltage is a function of the magnitude of the charge stored during each integration period. Each multiplexer cell also includes a random access multiplexer output circuit to which the output voltage signal produced by its associated input circuit is applied.
    Type: Grant
    Filed: November 30, 1987
    Date of Patent: March 14, 1989
    Assignee: Honeywell Inc.
    Inventor: Mark N. Gurnee
  • Patent number: 4807000
    Abstract: A high density optical detector mosaic array assembly having a plurality of interconnect locations comprised of IC readout pads in a pattern suitable for interconnecting a plurality of integrated circuit devices. The assembly comprises a substrate, a plurality of thin film metallization layers alternating with a plurality of thick film dielectric layers wherein the first of the thin film layers is deposited directly on the substrate and is delineated to form a plurality of interconnect lines disposed in a pattern suitable to form a first row of the dectector mosaic at a first edge of the assembly and terminating at an interconnect location. Terminal pads are applied to each such interconnect line and the first thick film dielectric layer is deposited over the thin film interconnect line such that only the terminal pads are left exposed.
    Type: Grant
    Filed: March 2, 1987
    Date of Patent: February 21, 1989
    Assignee: Honeywell Inc.
    Inventors: Mark N. Gurnee, William J. White
  • Patent number: 4598414
    Abstract: An input circuit coupled to receive a signal from a detector and compressing the input current representative of such signal with a fixed compression curve before injection of a charge representative thereof into a charge coupled device shift register, thereby accommodating a large dynamic range of input signal.
    Type: Grant
    Filed: October 26, 1984
    Date of Patent: July 1, 1986
    Assignee: Honeywell Inc.
    Inventors: Michael F. Dries, Mark N. Gurnee
  • Patent number: 4446372
    Abstract: A shield for limiting the radiation received by electromagnetic energy radiation detectors to the radiation provided to the detectors by the optics of an electromagnetic energy detection system. The shield comprises a member transparent to a predetermined spectrum of radiation. An opaque thin film is deposited on a surface of the member, the thin film having apertures defined therein, the detectors viewing the optics through the member and the apertures. The thin film shields the detectors from electromagnetic radiation generated outside the field of view of the optics, thereby improving the sensitivity of the detection system. Virtually any desired thickness for the member may be used, thus allowing very close placement of the shield to the detectors and permitting use of very high density arrays.
    Type: Grant
    Filed: July 1, 1981
    Date of Patent: May 1, 1984
    Assignee: Honeywell Inc.
    Inventor: Mark N. Gurnee
  • Patent number: 4021833
    Abstract: An improved lead tin telluride Schottky barrier photodiode includes a lead telluride -- lead tin telluride heterojunction structure to increase zero bias resistance.
    Type: Grant
    Filed: May 17, 1976
    Date of Patent: May 3, 1977
    Assignee: Honeywell Inc.
    Inventor: Mark N. Gurnee