Patents by Inventor Mark N. Slamowitz

Mark N. Slamowitz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6943596
    Abstract: Systems and methods are disclosed for a power-on reset used in low power supply voltage applications (i.e., having a full operating power supply voltage of less than about 2.0 volts). One embodiment of the reset circuit comprises a differential voltage generation circuit and an amplifier circuit. The differential voltage generation circuit is adapted to create two voltages changing at different rates. The amplifier circuit is adapted to amplify a difference between the two voltages.
    Type: Grant
    Filed: March 12, 2002
    Date of Patent: September 13, 2005
    Assignee: Broadcom Corporation
    Inventors: Mark N. Slamowitz, Bassem Radieddine
  • Publication number: 20030174002
    Abstract: Systems and methods are disclosed for a power-on reset used in low power supply voltage applications (i.e., having a full operating power supply voltage of less than about 2.0 volts). One embodiment of the reset circuit comprises a differential voltage generation circuit and an amplifier circuit. The differential voltage generation circuit is adapted to create two voltages changing at different rates. The amplifier circuit is adapted to amplify a difference between the two voltages.
    Type: Application
    Filed: March 12, 2002
    Publication date: September 18, 2003
    Inventors: Mark N. Slamowitz, Bassem Radieddine
  • Patent number: 5043939
    Abstract: An alpha radiation immune integrated circuit memory cell has a pair of secondary transistors connected to cross-couple the primary transistors to form a flow, secondary storage node. The secondary transistors are biased to a standby current that, in combination with the parasitic capacitances in the new cell, establishes a time constant sufficient to maintain the state of the secondary nodes during an alpha hit on the primary nodes, so that alpha immunity is achieved without added capacitance. A write boost circuit increases the current in the secondary transistors during a write operation. A memory array is formed of rows of such cells with all of the secondary emitters of each row coupled to a common emitter standby current source.
    Type: Grant
    Filed: June 15, 1989
    Date of Patent: August 27, 1991
    Assignee: Bipolar Integrated Technology, Inc.
    Inventors: Mark N. Slamowitz, Robert B. Lefferts