Abstract: A cascode amplifier formed as an integrated circuit on a III-V substrate. The substrate has a pair of elongated active regions formed along a pair of laterally spaced active regions of a surface of the substrate. Each one of the active regions has formed therein a plurality of electrically interconnected transistor cells. The transistor cells in a first one of the active regions are interconnected in a common emitter configuration and the plurality of transistor cells in a second one of the active regions are interconnected in a common base configuration. A plurality of first resistors is disposed over the surface of the substrate, each one of the resistors having a first electrode adapted for coupling to ground potential and a second electrode connected to emitter regions of a corresponding pair of adjacent transistor cells formed in the first one of the regions.

Abstract: A bipolar transistor having a pair of transistor cells formed on a single crystal substrate. Each one of the cells including a collector electrode, an elongated emitter electrode and a base electrode disposed over a first surface of the substrate. The base electrode is adapted to control a flow of carriers between the collector and emitter electrodes. An emitter pad is disposed over the first surface of the substrate. A pair of conductive, air-bridge members is provided. First ends of the bridge members are connected to the emitter pad and second ends of the bridge members are connected along a length of the elongated emitter electrode. The substrate has an emitter contact disposed on a second surface of the substrate. The emitter pad and the emitter contact are electrically connected by an electrically conductive via passing through the substrate between the first and second surfaces of the substrate.