Abstract: A water-borne latex paint system and a method of formulating a water borne latex paint system having viscosity color stability. The system includes a base paint, at least one associative thickener, a colorant compound, and at least 0.1% dry weight of a block copolymer ABLBA composition. The block copolymer acts as a viscosity stabilizer in the presence of associative thickeners. The A component includes a monomer unit containing a moiety such as an alkyl group, an aryl group or an alkyl aryl group; the B component includes a polyethylene oxide polymer or a polyethylene-polypropylene oxide copolymer; and the L component includes a dianhydride unit or a diisocyanate unit.

Abstract: A water-borne latex paint system, comprising a base paint, an associative thickener, a colorant compound, and at least 0.1% dry weight of a block copolymer ABCBA composition. For the ABCBA polymer wherein the A component is a hydrophobic group A, the B component is a hydrophilic polymer B and the C component is a low molecular weight hydrophobic group C. The ABCBA-type polymer includes an A component which is a monomer unit containing a moiety selected from the group consisting of an alkyl group, an aryl group or an alkyl aryl group, the B component includes poly(ethylene glycol), and the C component is selected from the group of diols consisting of poly(tetrahydrofuran), poly(caprolactone) poly(carbonate), ethylene glycol, propylene glycol, and 1,2-dodecanediol. The block copolymer acts as a viscosity stabilizer in the presence of associative thickeners.

Abstract: An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.