Patents by Inventor Mark Philip D'Evelyn

Mark Philip D'Evelyn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7009215
    Abstract: In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106?). Said growing includes applying a temporally varying thermal gradient (100, 100?, 102, 102?) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106?), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).
    Type: Grant
    Filed: October 24, 2003
    Date of Patent: March 7, 2006
    Assignee: General Electric Company
    Inventors: Mark Philip D'Evelyn, Xian-An Cao, Anping Zhang, Steven Francis LeBoeuf, Huicong Hong, Dong-Sil Park, Kristi Jean Narang
  • Patent number: 6887144
    Abstract: An element-doped diamond crystal is disclosed herein. The crystal includes at least one dopant element which has a greater concentration toward or near an outermost surface of the crystal than in the center of the crystal. The concentration of the dopant element is at a local minimum at least about 5 micrometers below the surface. The concentration-profile of the dopant element for these diamond crystals causes an expansion of the diamond lattice, thereby generating tangential compressive stresses at the surface of the diamond crystal. These stresses beneficially increase the compressive fracture strength of the diamond.
    Type: Grant
    Filed: February 14, 2001
    Date of Patent: May 3, 2005
    Assignee: Diamond Innovations, Inc.
    Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Thomas Richard Anthony, Clifford Lawrence Spiro, Yue Meng, Christopher Allen Long
  • Publication number: 20040245535
    Abstract: A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 104 per cm2 and an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.
    Type: Application
    Filed: April 26, 2004
    Publication date: December 9, 2004
    Applicant: General Electric Company
    Inventors: Mark Philip D'Evelyn, Nicole Andrea Evers, Steven Francis LeBoeuf, Xian-An Cao, An-Ping Zhang
  • Patent number: 6806508
    Abstract: A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise Ga1−x−yAlxInyN1−z−wPzAsw, or, preferably, Ga1−xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105 cm−2. A method of making the photodetector is also disclosed.
    Type: Grant
    Filed: April 20, 2001
    Date of Patent: October 19, 2004
    Assignee: General Electic Company
    Inventors: Mark Philip D'Evelyn, Nicole Andrea Evers, Kanin Chu
  • Publication number: 20040195598
    Abstract: Device, kit and method of using same to detect analytes such as nucleic acids are described. An excitation source, preferably a nitride-based LED, emits light capable of being absorbed by luminophores. Sensors are stably attached, preferably via covalent or ionic bonds, to a surface within the device, such as the surface of the excitation source that is exposed to the sample. When a complex is formed between the sensors and the analyte, the luminophores emit light or emit light of a different wavelength, thereby signaling the presence or quantity of the analyte.
    Type: Application
    Filed: December 29, 2003
    Publication date: October 7, 2004
    Inventors: Steven Alfred Tysoe, Mark Philip D'evelyn, Frank John Mondello
  • Publication number: 20040000266
    Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
    Type: Application
    Filed: June 5, 2003
    Publication date: January 1, 2004
    Inventors: Mark Philip D'Evelyn, Thomas Richard Anthony, Stephen Daley Arthur, Lionel Monty Levinson, John William Lucek, Larry Burton Rowland, Suresh Shankarappa Vagarali
  • Publication number: 20030192259
    Abstract: An abrasive diamond composite formed from coated diamond particles and a matrix material. The diamonds have a protective coating formed from a refractory material having a composition MCxNy, that prevents corrosive chemical attack of the diamonds by the matrix material. The abrasive diamond composite may further include an infiltrant, such as a braze material. Alternatively, the abrasive diamond composite may include a plurality of coated diamond particles and a braze material filling interstitial spaces between the coated diamond particles. Methods of making such abrasive diamond composites are also disclosed.
    Type: Application
    Filed: June 4, 2003
    Publication date: October 16, 2003
    Inventors: Mark Philip D'Evelyn, Michael Hans Loh, James Michael McHale, Kristi Jean Narang, Aaron Wilbur Saak, Steven William Webb
  • Publication number: 20030183155
    Abstract: A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.
    Type: Application
    Filed: March 27, 2002
    Publication date: October 2, 2003
    Applicant: General Electric Company
    Inventors: Mark Philip D'Evelyn, Steven William Webb, Suresh Shankarappa Vagarali, Yavuz Kadioglu, Dong-Sil Park, Zheng Chen
  • Publication number: 20030141301
    Abstract: A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550° C. and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550° C. and about 1500° C.
    Type: Application
    Filed: January 31, 2002
    Publication date: July 31, 2003
    Applicant: General Electric CRD
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Robert Arthur Giddings, Steven Alfred Tysoe, John William Lucek, Suresh Shankarappa Vagarali, Robert Vincent Leonelli, Joel Rice Dysart
  • Publication number: 20030140845
    Abstract: A pressure vessel for processing at least one material in a supercritical fluid. The pressure vessel includes a self-pressurizing capsule for containing at least one material and the supercritical fluid in a substantially air-free environment, a pressure transmission medium surrounding the capsule for maintaining an outer pressure on the capsule, at least one heating element insertable in the pressure transmission medium such that the heating element surrounds the capsule, a temperature measurement means for measuring a temperature of the capsule, a temperature controller for controlling the temperature and providing power to the heating element, a restraint to contain and hold in place the capsule, the pressure transmission medium, and the heating element, and at least one seal between the restraint and the pressure transmission medium for preventing escape of the pressure transmission medium.
    Type: Application
    Filed: January 31, 2002
    Publication date: July 31, 2003
    Applicant: General Electric Company
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Robert Arthur Giddings, Robert Vincent Leonelli, Stephen Lee Dole
  • Patent number: 6541115
    Abstract: A metal-infiltrated polycrystalline diamond composite tool comprising a plurality of diamond grains forming a continuous polycrystalline diamond matrix, a metallic phase being substantially palladium-free and contiguous to the continuous polycrystalline diamond matrix, wherein the metallic phase interpenetrates the continuous polycrystalline diamond matrix and substantially wets an outer surface of the continuous polycrystalline diamond matrix; and a working surface. The metallic phase is formed from an infiltrant and a wetting-enhancement layer disposed on the outer surfaces of the diamond particles, with both the infiltrant and wetting-enhancement layer being substantially palladium-free and comprising at least one metal from the group consisting of cobalt, iron, and nickel.
    Type: Grant
    Filed: February 26, 2001
    Date of Patent: April 1, 2003
    Assignee: General Electric Company
    Inventors: David Charles Pender, Charles Dominic Iacovangelo, Mark Philip D'Evelyn, Steven Alfred Tysoe
  • Publication number: 20030024351
    Abstract: A metal-infiltrated polycrystalline diamond composite tool comprising a plurality of diamond grains forming a continuous polycrystalline diamond matrix, a metallic phase being substantially palladium-free and contiguous to the continuous polycrystalline diamond matrix, wherein the metallic phase interpenetrates the continuous polycrystalline diamond matrix and substantially wets an outer surface of the continuous polycrystalline diamond matrix; and a working surface. The metallic phase is formed from an infiltrant and a wetting-enhancement layer disposed on the outer surfaces of the diamond particles, with both the infiltrant and wetting-enhancement layer being substantially palladium-free and comprising at least one metal from the group consisting of cobalt, iron, and nickel.
    Type: Application
    Filed: September 26, 2002
    Publication date: February 6, 2003
    Inventors: David Charles Pender, Charles Dominic Iacovangelo, Mark Philip D'Evelyn, Steven Alfred Tysoe
  • Publication number: 20020155634
    Abstract: A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise Ga1-x-yAlxInyN1-z-wPzAsw, or, preferably, Ga1-xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105 cm−2. A method of making the photodetector is also disclosed.
    Type: Application
    Filed: April 20, 2001
    Publication date: October 24, 2002
    Applicant: General Electric Company
    Inventors: Mark Philip D'Evelyn, Nicole Andrea Evers, Kanin Chu
  • Publication number: 20020119303
    Abstract: A metal-infiltrated polycrystalline diamond composite tool comprising a plurality of diamond grains forming a continuous polycrystalline diamond matrix, a metallic phase being substantially palladium-free and contiguous to the continuous polycrystalline diamond matrix, wherein the metallic phase interpenetrates the continuous polycrystalline diamond matrix and substantially wets an outer surface of the continuous polycrystalline diamond matrix; and a working surface. The metallic phase is formed from an infiltrant and a wetting-enhancement layer disposed on the outer surfaces of the diamond particles, with both the infiltrant and wetting-enhancement layer being substantially palladium-free and comprising at least one metal from the group consisting of cobalt, iron, and nickel.
    Type: Application
    Filed: February 26, 2001
    Publication date: August 29, 2002
    Applicant: General Electric Company
    Inventors: David Charles Pender, Charles Dominic Iacovangelo, Mark Philip D'Evelyn, Steven Alfred Tysoe
  • Publication number: 20020095875
    Abstract: An abrasive diamond composite formed from coated diamond particles and a matrix material. The diamonds have a protective coating formed from a refractory materia1 having a composition MCxNy, that prevents corrosive chemical attack of the diamonds by the matrix material. The abrasive diamond composite may further include an infiltrant, such as a braze material. Alternatively, the abrasive diamond composite may include a plurality of coated diamond particles and a braze material filling interstitial spaces between the coated diamond particles. Methods of making such abrasive diamond composites are also disclosed.
    Type: Application
    Filed: December 4, 2000
    Publication date: July 25, 2002
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, James Michael McHale, Michael Hans Loh, Aaron Wilbur Saak, Steven William Webb
  • Patent number: 6398867
    Abstract: A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride; providing mineralizer; providing solvent; providing a capsule; disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell; and subjecting the pressure cell to high pressure and high temperature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.
    Type: Grant
    Filed: October 6, 1999
    Date of Patent: June 4, 2002
    Assignee: General Electric Company
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang
  • Patent number: 6372002
    Abstract: A functionalized diamond comprises an organic functionalized moiety. The organic functionalized moiety being selected from: vinyl, amide, alcohol, acidics, phenolics, hydroxyls, carboxyl, aldehyde, and aliphatics, and combinations thereof.
    Type: Grant
    Filed: May 23, 2000
    Date of Patent: April 16, 2002
    Assignee: General Electric Company
    Inventors: Mark Philip D'Evelyn, James Michael McHale, Jr.