Patents by Inventor Mark R. Dyball

Mark R. Dyball has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substitutional carbon in silicon
    Patent number: 5212101
    Abstract: The invention provides a method of producing silicon with about 100% substitutionality of very high concentrations of carbon up to about 10.sup.21 cm.sup.-3, which has good quality recrystallized layers containing low levels of residual damage, and which avoids precipitation of mobile carbon. This method, compatible with current state-of-the-art VLSI silicon technology, comprises the sequential steps of: implanting a silicon wafer with carbon ions, and two step annealing of the implanted silicon wafer.
    Type: Grant
    Filed: November 6, 1991
    Date of Patent: May 18, 1993
    Assignee: Secretary of State for Defence in her Britannic Majesty's Government of the United Kingdom
    Inventors: Leigh T. Canham, Keith G. Barraclough, Mark R. Dyball