Patents by Inventor Mark R. Lemay

Mark R. Lemay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9711591
    Abstract: Methods of forming hetero-layers with reduced surface roughness and bulk defect density on non-native surfaces and the devices formed thereby are described. In one embodiment, the method includes providing a substrate having a top surface with a lattice constant and depositing a first layer on the top surface of the substrate. The first layer has a top surface with a lattice constant that is different from the first lattice constant of the top surface of the substrate. The first layer is annealed and polished to form a polished surface. A second layer is then deposited above the polished surface.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: July 18, 2017
    Assignee: Intel Corporation
    Inventors: Niloy Mukherjee, Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung, Mark R. Lemay, Marko Radosavljevic, Niti Goel, Loren Chow, Peter G. Tolchinsky, Jack T. Kavalieros, Robert S. Chau
  • Publication number: 20140203326
    Abstract: Methods of forming hetero-layers with reduced surface roughness and bulk defect density on non-native surfaces and the devices formed thereby are described. In one embodiment, the method includes providing a substrate having a top surface with a lattice constant and depositing a first layer on the top surface of the substrate. The first layer has a top surface with a lattice constant that is different from the first lattice constant of the top surface of the substrate. The first layer is annealed and polished to form a polished surface. A second layer is then deposited above the polished surface.
    Type: Application
    Filed: December 28, 2011
    Publication date: July 24, 2014
    Inventors: Niloy Mukherjee, Matthew V. Metz, james m. Powers, Van H. Le, Benjamin Chu-Kung, Mark R. Lemay, Marko Radosavljevic, Niti Goel