Patents by Inventor Mark R. McLean

Mark R. McLean has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitative artificial neural networks
    Patent number: 10740672
    Abstract: In one aspect, an apparatus includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the apparatus exhibits volatile memcapacitive behavior. In another aspect, a device includes a transistor, and a memcapacitor integrated onto the gate of the transistor, wherein the memcapacitor exhibits volatile memcapacitive behavior. The memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the gate dielectric of the transistor is replaced with the memcapacitor. In another aspect, an artificial neuron device includes a transistor, a volatile memcapacitor that is configured to operate as an electrically floating gate of the transistor, and one or more synaptic circuits that are coupled to the volatile memcapacitor. The volatile memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: August 11, 2020
    Assignee: Univerity of Massachusetts
    Inventors: Jianhua Yang, Qiangfei Xia, Zhongrui Wang, Qing Wu, Mark R. McLean
  • CAPACITIVE ARTIFICIAL NEURAL NETWORKS
    Publication number: 20190303744
    Abstract: In one aspect, an apparatus includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the apparatus exhibits volatile memcapacitive behavior. In another aspect, a device includes a transistor, and a memcapacitor integrated onto the gate of the transistor, wherein the memcapacitor exhibits volatile memcapacitive behavior. The memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the gate dielectric of the transistor is replaced with the memcapacitor. In another aspect, an artificial neuron device includes a transistor, a volatile memcapacitor that is configured to operate as an electrically floating gate of the transistor, and one or more synaptic circuits that are coupled to the volatile memcapacitor. The volatile memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor.
    Type: Application
    Filed: April 1, 2019
    Publication date: October 3, 2019
    Inventors: Jianhua Yang, Qiangfei Xia, Zhongrui Wang, Qing Wu, Mark R. McLean