Abstract: An apparatus and method for reducing the power consumption of a memory integrated circuit during a period of power down mode operation by interrupting the clocking transitions of a delay line. A memory integrated circuit may include a delay lock loop including a plurality of delay elements connected to one another in series and adapted to delay propagation of the signal of a free running clock. When the delayed signal is not required, as during a period of power down mode operation, the free running clock signal is prevented from reaching the delay lock loop. Consequently the delay elements do not toggle, and power associated with delay element toggling is saved.

Abstract: An apparatus and method for reducing the power consumption of a memory integrated circuit during a period of power down mode operation by interrupting the clocking transitions of a delay line. A memory integrated circuit may include a delay lock loop including a plurality of delay elements connected to one another in series and adapted to delay propagation of the signal of a free running clock. When the delayed signal is not required, as during a period of power down mode operation, the free running clock signal is prevented from reaching the delay lock loop. Consequently the delay elements do not toggle, and power associated with delay element toggling is saved.

Abstract: An integrated differential buffer circuit and its method of operation are described in which the buffer circuit has an internal bias line for controlling the supply of voltage to the buffer circuit. When the buffer circuit is first enabled, a start voltage is initially applied to the bias line and then removed to ensure proper operation of the buffer circuit when first enabled.

Abstract: The present invention provides a calibration circuit for data paths DQ0 . . . DQN of a memory device by using a masking data path and an output buffer circuit provided therein in the calibration process. Calibration of the masking data path output buffer circuit is achieved and the calibrate results are transferred to each of the buffer amplifiers in the data paths DQ0 . . . DQN.

Abstract: Integrated circuit power-up controllers, integrated circuit power-up circuits, and integrated circuit power-up methods are described. In one embodiment, first and second circuits are provided each having their own outputs. A state-dependent, power-up control circuit includes two inputs which are coupled respectively with the outputs of the first and second circuits. The state-dependent, power-up control circuit is configured to initiate power-up of a desired circuit after a predetermined state has been achieved at the two inputs. In another embodiment, a delay circuit is provided and configured to provide a delayed output. An input circuit is provided having an output. A power-up control circuit has inputs which are coupled respectively with the outputs of the delay circuit and the input circuit. The power-up control circuit has an output line which can assume a plurality of power-up states.

Abstract: An ATM switch including a multi-port memory is described. The multi-port memory having a dynamic random access memory (DRAM) and a plurality of input and output serial access memories (SAMs). Efficient, flexible transfer circuits and methods are described for transferring ATM data between the SAMs and the DRAM. The transfer circuits and methods include helper flip/flops to latch ATM data for editing prior to storage in the DRAM. Editing of ATM data transferred from the DRAM is also described. Dynamic parity generation and checking is described to detect errors induced during switching.

Abstract: An ATM switch including a multi-port memory is described. The multi-port memory has a dynamic random access memory (DRAM) and input and output serial access memories (SAMs). The multi-port memory includes an array of primary and redundant memory cells. Data transfer buses are described which traverse the array and can be coupled to either the primary or redundant memory cells. Redundant row enable circuitry is described which enables an entire row of redundant memory cells to be substituted for any row of primary memory cells.

Abstract: A voltage elevation circuit supplying additional voltage for gate switching having an elevated power supply connected to a first node of a capacitor using a transistor. The elevated power supply and booting circuit providing additional voltage for gate switching applications. One application is a MOSFET output driver application having a 3 Volt power supply. One configuration using a switch to charge a capacitor using a first voltage supply and then providing additional voltage by a boot device and by switching in an elevated power supply to maintain an elevated voltage at the node.

Abstract: An ATM switch including a multi-port memory is described. The multi-port memory has a dynamic random access memory (DRAM) and input and output serial access memories (SAMs). The multi-port memory includes an array of primary and redundant memory cells. Data transfer buses are described which traverse the array and can be coupled to either the primary or redundant memory cells. Redundant row enable circuitry is described which enables an entire row of redundant memory cells to be substituted for any row of primary memory cells.

Abstract: A voltage elevation circuit supplying additional voltage for gate switching having an elevated power supply connected to a first node of a capacitor using a transistor. The elevated power supply and booting circuit providing additional voltage for gate switching applications. One application is a MOSFET output driver application having a 3 Volt power supply. One configuration using a switch to charge a capacitor using a first voltage supply and then providing additional voltage by a boot device and by switching in an elevated power supply to maintain an elevated voltage at the node.

Abstract: A multiport memory is described which includes a random access memory (RAM) and serial access memories (SAMs). The multiport memory is well suited for storing asynchronous transfer mode (ATM) data cells. Control circuitry is provided to allow the multiport memory to be easily configured for operating at different input data rates. This is accomplished by configuring several of the SAMs to store a portion of an input ATM cell on an input clock cycle. The full ATM cell is stored in less clock cycles and can be transferred from the SAMs to the RAM in a single transfer cycle.

Abstract: The invention is a monolithic video random access memory (VRAM) chip that has more than one write control pin which is used to segment the VRAM into banks or sub-chips having four DQ planes such that a nibble of data can be written to the VRAM. Using the method of the invention a first bank may be written independently of a second bank, such that during a single memory cycle the first bank may be written and the second bank may be read. Using the circuit of the invention data is transferred in response to an internal write signal. The VRAM of the invention functions without the masking of a write to either bank. In addition the write memory function can be performed either through the random access memory port or through the serial access memory port.

Abstract: The invention is a monolithic video random access memory (VRAM) chip that has more than one write control pin which is used to segment the VRAM into banks or sub-chips having four DQ planes such that a nibble of data can be written to the VRAM. Using the method of the invention a first bank may be written independently of a second bank, such that during a single memory cycle the first bank may be written and the second bank may be read. The VRAM of the invention functions without the masking of a write to either bank. In addition the write memory function can be performed either through the random access memory port or through the serial access memory port.

Abstract: A multiport memory is described which includes a random access memory (RAM) and serial access memories (SAMs). The multiport memory is well suited for storing asynchronous transfer mode (ATM) data cells. Control circuitry is provided to allow the multiport memory to be easily configured for operating at different input data rates. This is accomplished by configuring several of the SAMs to store a portion of an input ATM cell on an input clock cycle. The full ATM cell is stored in less clock cycles and can be transferred from the SAMs to the RAM in a single transfer cycle.

Abstract: A system has multiple subsystems and a test signal source resident upon a common substrate. A first subsystem interfaces with an off-substrate functional tester during a test. The test signal source generates a first signal during the test for input to the second subsystem. The second subsystem responds performing an operation independent of operation and current state of the first subsystem. The functional tester verifies the independent operation of the first and second subsystems.

Abstract: A voltage elevation circuit supplying additional voltage for gate switching having an elevated power supply connected to a first node of a capacitor using a transistor. The elevated power supply and booting circuit providing additional voltage for gate switching applications. One application is a MOSFET output driver application having a 3 Volt power supply where noise margin demands elevated switching voltages. One configuration using a long channel transistor to limit current sourced by the elevated power supply. An alternate configuration using a switched elevated power supply to minimize loading on the elevated power supply.

Abstract: The invention is a monolithic memory device having a circuit and a method for decreasing the cell margin during a test mode. Decreasing the cell margin stresses the memory device during the test mode greater than a stress experienced during normal operation, thus test time can be decreased.

Abstract: The invention is a monolithic video random access memory (VRAM) chip that has more than one write control pin which is used to segment the VRAM into banks or sub-chips having four DQ planes such that a nibble of data can be written to the VRAM. Using the method of the invention a first bank may be written independently of a second bank, such that during a single memory cycle the first bank may be written and the second bank may be read. The VRAM of the invention functions without the masking of a write to either bank. In addition the write memory function can be performed either through the random access memory port or through the serial access memory port.

Abstract: A system has multiple subsystems and a test signal source resident upon a common substrate. A first subsystem interfaces with an off-substrate functional tester during a test. The test signal source generates a first signal during the test for input to the second subsystem. The second subsystem responds performing an operation independent of operation and current state of the first subsystem. The functional tester verifies the independent operation of the first and second subsystems.

Abstract: The invention is a monolithic memory device having a circuit and a method for decreasing the cell margin during a test mode. Decreasing the cell margin stresses the memory device during the test mode greater than a stress experienced during normal operation, thus test time can be decreased.