Patents by Inventor Mark R. Wilson

Mark R. Wilson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device with reduced charge trapping
    Patent number: 5882961
    Abstract: A semiconductor device (20) is fabricated by doping a dielectric layer (29) located over the surface of a semiconductor substrate (21). The dielectric layer (29) contains nitrogen and is doped with silicon ions by using an ion implantation process (15) such that a peak concentration (32) of the silicon ions remains in the dielectric layer (29) during the ion implantation process (15). Doping the dielectric layer (29) reduces charge trapping in the dielectric layer (29) and reduces power slump in the semiconductor device (20) during high frequency operation.
    Type: Grant
    Filed: September 29, 1997
    Date of Patent: March 16, 1999
    Assignee: Motorola, Inc.
    Inventors: Lawrence S. Klingbeil, Jr., Mark R. Wilson