Patents by Inventor Mark R. Wilson

Mark R. Wilson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080259519
    Abstract: A non-respirable aerosol, particularly a non-respirable aerosol comprising a biologically-effective amount of a biologically-active agent dissolved, emulsified, or suspended in a highly-aqueous liquid carrier vehicle. The highly-aqueous liquid carrier vehicle comprises about 60 wt % to about 100 wt % water, about 0 wt % to about 40 wt % of a co-solvent, about 0.05 wt % to about 10 wt % of an acceptable surfactant, and about 0 wt % to about 10 wt % of an excipient. The non-respirable aerosol is substantially monodisperse when dispensed from a sprayhead assembly comprising a preferably linear array of a plurality of nozzles and at least one counter electrode adapted to substantially equalize the charge fields of the plurality of nozzles.
    Type: Application
    Filed: September 14, 2005
    Publication date: October 23, 2008
    Applicant: Battelle Memorial Institute
    Inventors: Ada S. Cowan, Sreedhara Alavattam, Beverly A. Piatt, James E. Dvorsky, William M. Fountain, Mark R. Wilson
  • Patent number: 5945694
    Abstract: A semiconductor device (20) is formed on a compound semiconductor substrate (21). The semiconductor device (20) is oriented on the surface (40) of the compound semiconductor substrate (21) such that the physical forces that result from the thermal heating or cooling of the compound semiconductor substrate (21) are essentially equal. This orientation reduces the variability of the drain to source current of the semiconductor device (20) as the semiconductor device (20) is operated at different temperatures.
    Type: Grant
    Filed: January 31, 1997
    Date of Patent: August 31, 1999
    Assignee: Motorola, Inc.
    Inventors: Adolfo C. Reyes, Marino J. Martinez, Mark R. Wilson, Julio C. Costa, Ernest Schirmann
  • Patent number: 5882961
    Abstract: A semiconductor device (20) is fabricated by doping a dielectric layer (29) located over the surface of a semiconductor substrate (21). The dielectric layer (29) contains nitrogen and is doped with silicon ions by using an ion implantation process (15) such that a peak concentration (32) of the silicon ions remains in the dielectric layer (29) during the ion implantation process (15). Doping the dielectric layer (29) reduces charge trapping in the dielectric layer (29) and reduces power slump in the semiconductor device (20) during high frequency operation.
    Type: Grant
    Filed: September 29, 1997
    Date of Patent: March 16, 1999
    Assignee: Motorola, Inc.
    Inventors: Lawrence S. Klingbeil, Jr., Mark R. Wilson