Patents by Inventor Mark Raffetto
Mark Raffetto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8759868Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 ?. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.Type: GrantFiled: October 12, 2011Date of Patent: June 24, 2014Assignee: Cree, Inc.Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Patent number: 8686460Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 ?. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.Type: GrantFiled: October 12, 2011Date of Patent: April 1, 2014Assignee: Cree, Inc.Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Publication number: 20120080688Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 ?. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.Type: ApplicationFiled: October 12, 2011Publication date: April 5, 2012Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Patent number: 8089090Abstract: A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 ? and a specific contact resistivity less than about 10?3 ohm-cm2.Type: GrantFiled: July 27, 2005Date of Patent: January 3, 2012Assignee: Cree, Inc.Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Patent number: 8044425Abstract: A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 ? and a specific contact resistivity less than about 10?3 ohm-cm2.Type: GrantFiled: July 27, 2005Date of Patent: October 25, 2011Assignee: Cree, Inc.Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Patent number: 7608860Abstract: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided.Type: GrantFiled: July 2, 2007Date of Patent: October 27, 2009Assignees: Cree, Inc., Cree Microwave, LLCInventors: David B. Slater, Jr., Jayesh Bharathan, John Edmond, Mark Raffetto, Anwar Mohammed, Peter S. Andrews, Gerald H. Negley
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Patent number: 7341175Abstract: Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.Type: GrantFiled: April 27, 2004Date of Patent: March 11, 2008Assignee: Cree, Inc.Inventors: David B. Slater, Jr., Jayesh Bharathan, John Edmond, Mark Raffetto, Anwar Mohammed, Peter S. Andrews, Gerald H. Negley
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Publication number: 20070241360Abstract: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided.Type: ApplicationFiled: July 2, 2007Publication date: October 18, 2007Inventors: David Slater, Jr., Jayesh Bharathan, John Edmond, Mark Raffetto, Anwar Mohammed, Peter Andrews, Gerald Negley
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Patent number: 7259033Abstract: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided.Type: GrantFiled: August 17, 2004Date of Patent: August 21, 2007Assignees: Cree, Inc., Cree Microwave, LLCInventors: David B. Slater, Jr., Jayesh Bharathan, John Edmond, Mark Raffetto, Anwar Mohammed, Peter S. Andrews, Gerald H. Negley
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Publication number: 20060046328Abstract: A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 ? and a specific contact resistivity less than about 10?3 ohm-cm2.Type: ApplicationFiled: July 27, 2005Publication date: March 2, 2006Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Patent number: 6888167Abstract: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided.Type: GrantFiled: June 27, 2002Date of Patent: May 3, 2005Assignees: Cree, Inc., Cree Microwave, Inc.Inventors: David B. Slater, Jr., Jayesh Bharathan, John Edmond, Mark Raffetto, Anwar Mohammed, Peter S. Andrews, Gerald H. Negley
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Publication number: 20040200882Abstract: Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.Type: ApplicationFiled: April 27, 2004Publication date: October 14, 2004Inventors: David B. Slater, Jayesh Bharathan, John Edmond, Mark Raffetto, Anwar Mohammed, Peter S. Andrews, Gerald H. Negley
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Patent number: 6747298Abstract: Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.Type: GrantFiled: June 27, 2002Date of Patent: June 8, 2004Assignee: Cree, Inc.Inventors: David B. Slater, Jr., Jayesh Bharathan, John Edmond, Mark Raffetto, Anwar Mohammed, Peter S. Andrews, Gerald H. Negley
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Publication number: 20030045015Abstract: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided.Type: ApplicationFiled: June 27, 2002Publication date: March 6, 2003Inventors: David B. Slater, Jayesh Bharathan, John Edmond, Mark Raffetto, Anwar Mohammed, Peter S. Andrews, Gerald H. Negley
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Publication number: 20030042507Abstract: Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.Type: ApplicationFiled: June 27, 2002Publication date: March 6, 2003Inventors: David B. Slater, Jayesh Bharathan, John Edmond, Mark Raffetto, Anwar Mohammed, Peter S. Andrews, Gerald H. Negley