Patents by Inventor Mark Richard Tesauro

Mark Richard Tesauro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of utilizing hard mask for copper plasma etch
    Patent number: 6797640
    Abstract: A hard mask, e.g., a silicon dioxide or silicon nitride film, is used to avoid organic polymer materials in copper plasma etch applications. The hard mask would be deposited as a blanket layer on the Cu metal layer and itself be patterned and etched with a conventional photolithographic resist pattern. The hard mask etch is stopped shortly before the Cu surface is exposed. Halting the hard mask etch before the Cu surface is exposed facilitates the use of conventional cleaning processes following the hard mask etch. The remaining thin layer of hard mask can be etched through during the beginning of the Cu metal etch process. Any remaining hard mask deposited on the Cu metal layer can form a part of a new dielectric layer.
    Type: Grant
    Filed: October 2, 2001
    Date of Patent: September 28, 2004
    Assignee: STMicroelectronics, Inc.
    Inventors: Mark Richard Tesauro, Peter D. Nunan
  • Hard Mask for copper plasma etch
    Publication number: 20020048952
    Abstract: A hard mask, e.g., a silicon dioxide or silicon nitride film, is used to avoid organic polymer materials in copper plasma etch applications. The hard mask would be deposited as a blanket layer on the Cu metal layer and itself be patterned and etched with a conventional photolithographic resist pattern. The hard mask etch is stopped shortly before the Cu surface is exposed. Halting the hard mask etch before the Cu surface is exposed facilitates the use of conventional cleaning processes following the hard mask etch. The remaining thin layer of hard mask can be etched through during the beginning of the Cu metal etch process. Any remaining hard mask deposited on the Cu metal layer can form a part of a new dielectric layer.
    Type: Application
    Filed: October 2, 2001
    Publication date: April 25, 2002
    Inventors: Mark Richard Tesauro, Peter D. Nunan
  • Hard mask for copper plasma etch
    Patent number: 6355979
    Abstract: A hard mask, e.g., a silicon dioxide or silicon nitride film, is used to avoid organic polymer materials in copper plasma etch applications. The hard mask would be deposited as a blanket layer on the Cu metal layer and itself be patterned and etched with a conventional photolithographic resist pattern. The hard mask etch is stopped shortly before the Cu surface is exposed. Halting the hard mask etch before the Cu surface is exposed facilitates the use of conventional cleaning processes following the hard mask etch. The remaining thin layer of hard mask can be etched through during the beginning of the Cu metal etch process. Any remaining hard mask deposited on the Cu metal layer can form a part of a new dielectric layer.
    Type: Grant
    Filed: May 25, 1999
    Date of Patent: March 12, 2002
    Assignee: STMicroelectronics, Inc.
    Inventors: Mark Richard Tesauro, Peter D. Nunan
  • HARD MASK FOR COPPER PLASMA ETCH
    Publication number: 20010035582
    Abstract: A hard mask, e.g., a silicon dioxide or silicon nitride film, is used to avoid organic polymer materials in copper plasma etch applications. The hard mask would be deposited as a blanket layer on the Cu metal layer and itself be patterned and etched with a conventional photolithographic resist pattern. The hard mask etch is stopped shortly before the Cu surface is exposed. Halting the hard mask etch before the Cu surface is exposed facilitates the use of conventional cleaning processes following the hard mask etch. The remaining thin layer of hard mask can be etched through during the beginning of the Cu metal etch process. Any remaining hard mask deposited on the Cu metal layer can form a part of a new dielectric layer.
    Type: Application
    Filed: May 25, 1999
    Publication date: November 1, 2001
    Inventors: MARK RICHARD TESAURO, PETER D. NUNAN