Abstract: A precursor material for the preparation of superconductors based on Bi2Sr2Ca1Cu2O8+? wherein the precursor material which is as close to equilibrium state as possible, i.e., has less than 5% in average 2201 intergrowths in the 2212 phase; in particular, the present invention relates to a precursor material, which is converted to the final conductor by partial melt processing, as well as to a process for the production of the precursor material and the use of the precursor material for preparing superconductors based on Bi2Sr2Ca1Cu2O8+?.

Abstract: A multilayer superconducting wire 7 with essentially round cross sectional area where the outer surface of the round wire is provided with a high temperature superconductor layer 3 and where at least the high temperature superconductor layer 3 is fabricated as a spiral running along the length of the superconductor wire 7 in parallel lanes 15.

Abstract: Method of depositing a layer of oxide of at least one metal element on a curved surface of a textured metal substrate, said method comprising the following steps: (1) a layer of a precursor of at least one oxide of a metal is deposited using an organic solution of at least one precursor of said metal, this solution preferably having a viscosity, measured at the temperature of the method, of between 1 mPa s and 20 mPa s, and even more preferentially between 2 mPa s and 10 mPa s. (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas, said reducing gas preferably having a flow rate greater than 0.005 cm/s, preferentially between 0.012 cm/s and 0.1 cm/s, and even more preferentially between 0.04 cm/s and 0.08 cm/s.

Abstract: Method of depositing a buffer layer of epitaxial metal oxide on a functionalised surface of a textured metal substrate, said method comprising the following steps: (1) a layer is deposited of a precursor of an oxide of the type A2?xB2+xO7 where A represents a metal of valency 3 or a mixture of several of these metals, and B a metal of valency 4, and x is a number between ?0.1 and +0.1, from a solution of carboxylates of said metals A and B, (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas.

Abstract: A process for preparing a shaped substrate suitable in the production of coated conductors which process allows the deformation of a textured substrate onto which a textured buffer layer has been already grown.

Abstract: Method of depositing a layer of oxide of at least one metal element on a curved surface of a textured metal substrate, said method comprising the following steps: (1) a layer of a precursor of at least one oxide of a metal is deposited using an organic solution of at least one precursor of said metal, this solution preferably having a viscosity, measured at the temperature of the method, of between 1 mPa s and 20 mPa s, and even more preferentially between 2 mPa s and 10 mPa s. (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas, said reducing gas preferably having a flow rate greater than 0.005 cm/s, preferentially between 0.012 cm/s and 0.1 cm/s, and even more preferentially between 0.04 cm/s and 0.08 cm/s.

Abstract: Method of depositing a buffer layer of epitaxial metal oxide on a functionalised surface of a textured metal substrate, said method comprising the following steps: (1) a layer is deposited of a precursor of an oxide of the type A2?xB2+xO7 where A represents a metal of valency 3 or a mixture of several of these metals, and B a metal of valency 4, and x is a number between ?0.1 and +0.1, from a solution of carboxylates of said metals A and B, (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas.

Abstract: A multilayer superconducting wire 7 with essentially round cross sectional area where the outer surface of the round wire is provided with a high temperature superconductor layer 3 and where at least the high temperature superconductor layer 3 is fabricated as a spiral running along the length of the superconductor wire 7 in parallel lanes 15.

Abstract: A process for preparing a shaped substrate suitable in the production of coated conductors which process allows the deformation of a textured substrate onto which a textured buffer layer has been already grown.

Abstract: Coated conductors have a substrate, a high temperature superconductor layer and at least one or more buffer layers, wherein at least one of the buffer layers is a template for biaxially orienting the high temperature superconductor layer wherein the template is composed of a polycrystalline film consisting of a non-stoichiometric material having the nominal chemical formula A2?xB2+xO7 with B being at least one selected from Zr, Hf, Sn, Pb and Ti; A being at least one selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Y, Tm, Yb and Lu; and x?0; and wherein the substrate is textured.

Abstract: A precursor material for the preparation of superconductors based on Bi2Sr2Ca1Cu2O8+? wherein the precursor material which is as close to equilibrium state as possible, i.e., has less than 5% in average 2201 intergrowths in the 2212 phase; in particular, the present invention relates to a precursor material, which is converted to the final conductor by partial melt processing, as well as to a process for the production of the precursor material and the use of the precursor material for preparing superconductors based on Bi2Sr2Ca1Cu2O8+?.