Patents by Inventor Mark Rinehimer

Mark Rinehimer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8227855
    Abstract: Disclosed are semiconductor devices with breakdown voltages that are more controlled and stable after repeated exposure to breakdown conditions than prior art devices. The disclosed devices can be used to provide secondary circuit functions not previously contemplated by the prior art.
    Type: Grant
    Filed: February 9, 2009
    Date of Patent: July 24, 2012
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Joseph Yedinak, Mark Rinehimer, Thomas E. Grebs, John Benjamin
  • Patent number: 8198687
    Abstract: A structure that includes a rectifier further comprises a semiconductor region of a first conductivity type, and trenches that extend into the semiconductor region. A dielectric layer lines lower sidewalls of each trench but is discontinuous along a bottom of each trench. A silicon region of a second conductivity type extends along the bottom of each trench and forms a PN junction with the semiconductor region. A shield electrode in a bottom portion of each trench is in direct contact with the silicon region. A gate electrode extends over the shield electrode. An interconnect layer extends over the semiconductor region and is in electrical contact with the shield electrode. The interconnect layer further contacts mesa surfaces of the semiconductor region between adjacent trenches to form Schottky contacts therebetween.
    Type: Grant
    Filed: May 13, 2010
    Date of Patent: June 12, 2012
    Assignee: Fairchild Semiconductor Corporation
    Inventor: Mark Rinehimer
  • Patent number: 8148749
    Abstract: Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device comprises a semiconductor region having a surface, a first area of the semiconductor region, a well region of a first conductivity type disposed in the semiconductor region and around the first area, and a plurality of trenches extending in a semiconductor region. Each trench haves a first end disposed in a first portion of the well region, a second end disposed in a second portion of the well region, and a middle portion between the first and second ends and disposed in the first area. Each trench further having opposing sidewalls lined with a dielectric layer, and a conductive electrode disposed on at least a portion of the dielectric layer.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: April 3, 2012
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Thomas E. Grebs, Mark Rinehimer, Joseph Yedinak, Dean E. Probst, Gary Dolny, John Benjamin
  • Publication number: 20100219461
    Abstract: A structure that includes a rectifier further comprises a semiconductor region of a first conductivity type, and trenches that extend into the semiconductor region. A dielectric layer lines lower sidewalls of each trench but is discontinuous along a bottom of each trench. A silicon region of a second conductivity type extends along the bottom of each trench and forms a PN junction with the semiconductor region. A shield electrode in a bottom portion of each trench is in direct contact with the silicon region. A gate electrode extends over the shield electrode. An interconnect layer extends over the semiconductor region and is in electrical contact with the shield electrode. The interconnect layer further contacts mesa surfaces of the semiconductor region between adjacent trenches to form Schottky contacts therebetween.
    Type: Application
    Filed: May 13, 2010
    Publication date: September 2, 2010
    Inventor: Mark Rinehimer
  • Publication number: 20100207205
    Abstract: Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described.
    Type: Application
    Filed: February 19, 2009
    Publication date: August 19, 2010
    Inventors: Thomas E. Grebs, Mark Rinehimer, Joseph Yedinak, Dean E. Probst, Gary Dolny, John Benjamin
  • Publication number: 20100200910
    Abstract: Disclosed are semiconductor devices with breakdown voltages that are more controlled and stable after repeated exposure to breakdown conditions than prior art devices. The disclosed devices can be used to provide secondary circuit functions not previously contemplated by the prior art.
    Type: Application
    Filed: February 9, 2009
    Publication date: August 12, 2010
    Inventors: Joseph Yedinak, Mark Rinehimer, Thomas E. Grebs, John Benjamin
  • Patent number: 7750412
    Abstract: A structure that includes a rectifier is formed as follows. A trench is formed in a semiconductor region of a first conductivity type. A dielectric layer is formed along opposing sidewalls of the trench but is discontinuous along the bottom of the trench. A doped liner is formed over the dielectric layer and along the bottom of the trench. The doped liner includes dopants of a second conductivity type and is in direct contact with the semiconductor region along the bottom of the trench. A portion of the dopants are diffused from the doped liner into the semiconductor region along the bottom of the trench to form a doped region. The doped region forms a PN junction with the surrounding semiconductor region.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: July 6, 2010
    Assignee: Fairchild Semiconductor Corporation
    Inventor: Mark Rinehimer
  • Publication number: 20100032790
    Abstract: A structure that includes a rectifier is formed as follows. A trench is formed in a semiconductor region of a first conductivity type. A dielectric layer is formed along opposing sidewalls of the trench but is discontinuous along the bottom of the trench. A doped liner is formed over the dielectric layer and along the bottom of the trench. The doped liner includes dopants of a second conductivity type and is in direct contact with the semiconductor region along the bottom of the trench. A portion of the dopants are diffused from the doped liner into the semiconductor region along the bottom of the trench to form a doped region. The doped region forms a PN junction with the surrounding semiconductor region.
    Type: Application
    Filed: August 6, 2008
    Publication date: February 11, 2010
    Inventor: Mark Rinehimer