Abstract: Disclosed are semiconductor devices with breakdown voltages that are more controlled and stable after repeated exposure to breakdown conditions than prior art devices. The disclosed devices can be used to provide secondary circuit functions not previously contemplated by the prior art.

Abstract: A structure that includes a rectifier further comprises a semiconductor region of a first conductivity type, and trenches that extend into the semiconductor region. A dielectric layer lines lower sidewalls of each trench but is discontinuous along a bottom of each trench. A silicon region of a second conductivity type extends along the bottom of each trench and forms a PN junction with the semiconductor region. A shield electrode in a bottom portion of each trench is in direct contact with the silicon region. A gate electrode extends over the shield electrode. An interconnect layer extends over the semiconductor region and is in electrical contact with the shield electrode. The interconnect layer further contacts mesa surfaces of the semiconductor region between adjacent trenches to form Schottky contacts therebetween.

Abstract: Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device comprises a semiconductor region having a surface, a first area of the semiconductor region, a well region of a first conductivity type disposed in the semiconductor region and around the first area, and a plurality of trenches extending in a semiconductor region. Each trench haves a first end disposed in a first portion of the well region, a second end disposed in a second portion of the well region, and a middle portion between the first and second ends and disposed in the first area. Each trench further having opposing sidewalls lined with a dielectric layer, and a conductive electrode disposed on at least a portion of the dielectric layer.

Abstract: A structure that includes a rectifier further comprises a semiconductor region of a first conductivity type, and trenches that extend into the semiconductor region. A dielectric layer lines lower sidewalls of each trench but is discontinuous along a bottom of each trench. A silicon region of a second conductivity type extends along the bottom of each trench and forms a PN junction with the semiconductor region. A shield electrode in a bottom portion of each trench is in direct contact with the silicon region. A gate electrode extends over the shield electrode. An interconnect layer extends over the semiconductor region and is in electrical contact with the shield electrode. The interconnect layer further contacts mesa surfaces of the semiconductor region between adjacent trenches to form Schottky contacts therebetween.

Abstract: Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described.

Abstract: Disclosed are semiconductor devices with breakdown voltages that are more controlled and stable after repeated exposure to breakdown conditions than prior art devices. The disclosed devices can be used to provide secondary circuit functions not previously contemplated by the prior art.

Abstract: A structure that includes a rectifier is formed as follows. A trench is formed in a semiconductor region of a first conductivity type. A dielectric layer is formed along opposing sidewalls of the trench but is discontinuous along the bottom of the trench. A doped liner is formed over the dielectric layer and along the bottom of the trench. The doped liner includes dopants of a second conductivity type and is in direct contact with the semiconductor region along the bottom of the trench. A portion of the dopants are diffused from the doped liner into the semiconductor region along the bottom of the trench to form a doped region. The doped region forms a PN junction with the surrounding semiconductor region.

Abstract: A structure that includes a rectifier is formed as follows. A trench is formed in a semiconductor region of a first conductivity type. A dielectric layer is formed along opposing sidewalls of the trench but is discontinuous along the bottom of the trench. A doped liner is formed over the dielectric layer and along the bottom of the trench. The doped liner includes dopants of a second conductivity type and is in direct contact with the semiconductor region along the bottom of the trench. A portion of the dopants are diffused from the doped liner into the semiconductor region along the bottom of the trench to form a doped region. The doped region forms a PN junction with the surrounding semiconductor region.