Patents by Inventor Mark Rioux

Mark Rioux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated gate runner and field implant termination for trench devices
    Patent number: 8872278
    Abstract: In one general aspect, an apparatus can include a plurality of trench metal-oxide-semiconductor field effect transistors (MOSFET) devices formed within an epitaxial layer of a substrate, and a gate-runner trench disposed around the plurality of trench MOSFET devices and disposed within the epitaxial layer. The apparatus can also include a floating-field implant defined by a well implant and disposed around the gate-runner trench.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: October 28, 2014
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Jifa Hao, Gary Dolny, Mark Rioux
  • INTEGRATED GATE RUNNER AND FIELD IMPLANT TERMINATION FOR TRENCH DEVICES
    Publication number: 20130099311
    Abstract: In one general aspect, an apparatus can include a plurality of trench metal-oxide-semiconductor field effect transistors (MOSFET) devices formed within an epitaxial layer of a substrate, and a gate-runner trench disposed around the plurality of trench MOSFET devices and disposed within the epitaxial layer. The apparatus can also include a floating-field implant defined by a well implant and disposed around the gate-runner trench.
    Type: Application
    Filed: October 25, 2011
    Publication date: April 25, 2013
    Inventors: Jifa Hao, Gary Dolny, Mark Rioux