Patents by Inventor Mark Roman Guidry

Mark Roman Guidry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product
    Patent number: 3996655
    Abstract: The disclosure relates to methods of forming Insulated Gate Field Effect transistors and the product suitable for integrated circuits with channel lengths of 1 micron or less, the transistors being isolated from other transistors or other components in the circuit without the requirements of extra isolation steps. This is provided by means of a double diffusion which isolates the channel of the transistor from other elements in the circuit. Channel length is solely a function of the diffusion schedule through openings in the oxide through which the double diffusion takes place.
    Type: Grant
    Filed: August 25, 1975
    Date of Patent: December 14, 1976
    Assignee: Texas Instruments Incorporated
    Inventors: James A. Cunningham, James E. Schroeder, Mark Roman Guidry