Patents by Inventor Mark Rouse

Mark Rouse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Variable reference voltage circuit for non-volatile memory
    Patent number: 8325540
    Abstract: A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
    Type: Grant
    Filed: May 27, 2011
    Date of Patent: December 4, 2012
    Assignee: Cypress Semiconductor Corporation
    Inventors: Harold Kutz, Mark Rouse, Eric D. Blom
  • Variable reference voltage circuit for non-volatile memory
    Patent number: 7952942
    Abstract: A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
    Type: Grant
    Filed: August 11, 2009
    Date of Patent: May 31, 2011
    Assignee: Cypress Semiconductor Corporation
    Inventors: Harold Kutz, Mark Rouse, Eric D. Blom
  • Variable reference voltage circuit for non-volatile memory
    Patent number: 7586795
    Abstract: A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: September 8, 2009
    Assignee: Cypress Semiconductor Corporation
    Inventors: Harold Kutz, Mark Rouse, Eric D. Blom
  • Variable reference voltage circuit for non-volatile memory
    Publication number: 20070217271
    Abstract: A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
    Type: Application
    Filed: March 20, 2006
    Publication date: September 20, 2007
    Inventors: Harold Kutz, Mark Rouse, Eric Blom
  • Method and system for programming a memory device
    Patent number: 6829190
    Abstract: A method for programming a memory device is disclosed. In one method embodiment, the present invention receives a measurement from a temperature sensor located near a non-volatile programmable memory device. Next, a transformation is accessed. Then, the measurement from the temperature sensor is processed in conjunction with the transformation to establish a programming time for a memory device as a function of a programming voltage and the temperature of the memory device. The programming voltage is then applied to the memory device for the length of time specified by the programming time during the programming pulse of the memory device to accurately program the device using an optimum amount of current.
    Type: Grant
    Filed: August 29, 2003
    Date of Patent: December 7, 2004
    Assignee: Cypress Semiconductor Corporation
    Inventors: Warren Snyder, Mark Rouse
  • Method and system for programming a memory device
    Patent number: 6661724
    Abstract: A method for programming a memory device is disclosed. In one method embodiment, the present invention receives a measurement from a temperature sensor located near a non-volatile programmable memory device. Next, a transformation is accessed. Then, the measurement from the temperature sensor is processed in conjunction with the transformation to establish a programming time for a memory device as a function of a programming voltage and the temperature of the memory device. The programming voltage is then applied to the memory device for the length of time specified by the programming time during the programming pulse of the memory device to accurately program the device using an optimum amount of current.
    Type: Grant
    Filed: June 13, 2002
    Date of Patent: December 9, 2003
    Assignee: Cypress Semiconductor Corporation
    Inventors: Warren Snyder, Mark Rouse