Abstract: A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Abstract: The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

Abstract: A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Abstract: A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Abstract: The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

Abstract: An array of VCSEL devices and a process for fabricating the VCSEL array is disclosed. The VCSEL array emits light at n different wavelengths, wherein n is at least two. A first portion of the VCSEL devices in the array emits light at a first wavelength and a second portion of the VCSEL devices emits light at a second wavelength. Each VCSEL device has an active region consisting of alternating bands of quantum wells and boundary layers bounded by top and bottom separate confinement layers. The active region is bounded by top and bottom mirrors. The length of the active region of the VCSEL devices that emit light at the first wavelength, &lgr;s1, is different from the length of the active region of the VCSEL devices that emit light at a second wavelength. The array is fabricated by forming successive layers of material on a III-V semiconductor substrate. The composition and dimensions of the individual devices are first determined from the desired emission wavelength, &lgr;sn, of the devices in the array.

Abstract: The invention is a semiconductor optical device and a method of manufacture. The device includes a first waveguide having an edge, and a second waveguide adjacent to at least a portion of the first waveguide including the edge so that light is coupled from the first to the second waveguide. The second waveguide has a modal index which is essentially constant at least at the edge of the first waveguide. The method includes forming at least the second waveguide by Selective Area Growth (SAG) using oxide pads of a particular geometry to achieve the essentially constant modal index. In one embodiment, the device is an expanded beam laser with an expander portion which is less than 300 microns.

Abstract: A process for fabricating a waveguide with a desired tapered profile is disclosed. The waveguide has a first section with a first height and a second section with a second height. The first height is greater than the second height. The waveguide height tapers from the first height to the second height. The waveguide is a compound semiconductor material and is formed using selective area growth. In selective area growth, a dielectric mask is formed on a substrate. The dimensions of the dielectric mask are selected to provide a waveguide with the desired dimensions. The compound semiconductor material is deposited on the substrate using chemical vapor deposition. The dielectric mask affects the rate at which the compound material is deposited in areas of the substrate proximate to the mask. Therefore, the profile of the waveguide formed using the selected mask dimensions is modeled and compared with the desired profile.

Abstract: A micro-photoreflectance technique has been developed for performing non-destructive analysis of III-V optoelectronic devices. By using a significantly reduced spot size (for example, 10 micrometers), various compositional features of the device may be analyzed and the Franz-Keldysh oscillations appearing in the micro-photoreflectance wavelength spectra (such as those beyond the barrier/SCL wavelength in an EML structure) may be analyzed to provide information regarding the physical characteristics of the device, such as the electric field and p-i junction placement within an exemplary EML device structure.