Patents by Inventor Mark S. Usefara

Mark S. Usefara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing large area SiC substrates
    Patent number: 7888248
    Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
    Type: Grant
    Filed: July 13, 2007
    Date of Patent: February 15, 2011
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Narsingh Bahadur Singh, Brian P. Wagner, David J. Knuteson, David Kahler, Andre E. Berghmans, Michael Aumer, Jerry W. Hedrick, Marc E. Sherwin, Michael M. Fitelson, Mark S. Usefara, Sean McLaughlin, Travis Randall, Thomas J. Knight
  • Method of producing large area SiC substrates
    Publication number: 20090014756
    Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
    Type: Application
    Filed: July 13, 2007
    Publication date: January 15, 2009
    Inventors: Narsingh Bahadur Singh, Brian P. Wagner, David J. Knuteson, David Kahler, Andre E. Berghmans, Michael Aumer, Jerry W. Hedrick, Marc E. Sherwin, Michael M. Fitelson, Mark S. Usefara, Sean McLaughlin, Travis Randall, Thomas J. Knight