Abstract: Provided herein are methods for treating nephrolithiasis and protecting the urothelium and inner lining of the kidney from thermal damage during lithotripsy by use of a thermosensitive bio-adhesive hydrogel. The described method dramatically improved the efficiency and effectiveness of stone clearance compared to conventional techniques while providing protection to the urothelium from potentially damaging temperature spikes.

Abstract: Provided herein are methods for treating nephrolithiasis and protecting the urothelium and inner lining of the kidney from thermal damage during lithotripsy by use of a thermosensitive bio-adhesive hydrogel. The described method dramatically improved the efficiency and effectiveness of stone clearance compared to conventional techniques while providing protection to the urothelium from potentially damaging temperature spikes.

Abstract: A surge suppressor semiconductor structure includes a semiconductor substrate of a first conductivity type and an epitaxial semiconductor layer of a second conductivity type disposed thereon. A region in the epitaxial layer has a higher dopant concentration than the remainder of the epitaxial layer. This creates a junction at an interface of the substrate and the highly doped region of the epitaxial layer. A moat is disposed about the epitaxial layer and a portion of the substrate and dielectric material is disposed in the moat and on the epitaxial layer. Contacts are then formed to contact both the highly doped region of the epitaxial layer and the substrate.

Abstract: The manufacturing yield and properties of Zener diodes and other PN junctions are improved by locating the main PN junction remote from the die surface and providing at least two shallower concentric P regions of lighter doping surrounding the main P region. A first shallow P region contacts the main P region and a second extends to the die edge and is separated from the first region by an annular N region. Metallization contacting the main P region extends over the first shallow P region but not over the annular N region. Contact to the N substrate is conveniently made on the rear surface of the die.