Patents by Inventor Mark Schrauben

Mark Schrauben has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140225030
    Abstract: A method of controlling the crystallinity of a silicon powder may include heating a reactor to a temperature of no more than 650° C., and flowing a feed gas comprising silane and a carrier gas into the reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon. According to another embodiment, a method of controlling the crystallinity of a silicon powder may include flowing a feed gas comprising silane and a carrier gas into a heated reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2, and maintaining an internal reactor pressure of about 2 atm or less during the flowing of the feed gas into the heated reactor. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.
    Type: Application
    Filed: February 13, 2014
    Publication date: August 14, 2014
    Inventors: Max Dehtiar, William Herron, Byung K. Hwang, Jennifer Larimer, Mark Schrauben, Raymond Tabler
  • Publication number: 20140220347
    Abstract: An electrode composition comprises a silicon powder comprising non-crystalline and crystalline silicon, where the crystalline silicon is present in the silicon powder at a concentration of no more than about 20 wt. %. An electrode for an electrochemical cell comprises an electrochemically active material comprising non-crystalline silicon and crystalline silicon, where the non-crystalline silicon and the crystalline silicon are present prior to cycling of the electrode. A method of controlling the crystallinity of a silicon powder includes heating a reactor to a temperature of no more than 650° C. and flowing a feed gas comprising silane and a carrier gas into the reactor while maintaining an internal reactor pressure of about 2 atm or less. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.
    Type: Application
    Filed: August 14, 2012
    Publication date: August 7, 2014
    Applicants: Dow Corning Corporation, Hemlock Semiconductor Corporation, Dow Corning Toray Co., Ltd.
    Inventors: Max Dehtiar, Paul Fisher, Matthew A. Gave, William Herron, Takakazu Hino, Byung K. Hwang, Jennifer Larimer, Jeong Yong Lee, Joel P. McDonald, Mark Schrauben, Raymond Tabler
  • Publication number: 20100316539
    Abstract: The present invention relates to a heat exchange element for use in the direct process. The heat exchange element comprises a heat exchange element with a wear resistant coating on the surface of at least a portion of its surface. The wear resistant coating forms strong bonds to the heat exchange element and has a hardness greater than 50 Rockwell C. Such a coating can survive the physical and chemical environment present in the direct process.
    Type: Application
    Filed: November 28, 2007
    Publication date: December 16, 2010
    Inventors: Jonathan J. Cleland Host, Michael George Kroupa, Jonathan Molloy, Ryan T. Pritchard, Mark Schrauben