Abstract: A sense amplifier may be operable to form a current-mirror reference using a first PMOS transistor and a NMOS transistor. Currents at a first internal terminal and a second internal terminal may be generated based on the current-mirror reference. Voltage signals at the first internal terminal and the second internal terminal may be generated based on received differential input signals and the currents at the first internal terminal and the second internal terminal. The sense amplifier may limit voltage excursions of the voltage signals at the first internal terminal and/or of the second internal terminal using a pair of cross coupled PMOS transistors, respectively. Voltage signals at a third internal terminal and a fourth internal terminal may be generated based on voltage signals at the first internal terminal and the second internal terminal. An output signal may be generated based on the voltage signal at the fourth internal terminal.

Abstract: A disclosed embodiment is a low leakage data retention flip flop comprising a master circuit for retaining data during sleep mode, wherein the master circuit is configured to receive a reduced supply voltage during the sleep mode. The flip flop includes a slave circuit having low threshold voltage transistors, where the slave circuit is turned off during the sleep mode. In various embodiments, the master circuit might utilize high threshold voltage, standard threshold voltage, or low threshold voltage transistors. Similarly, the slave circuit might utilize high threshold voltage, standard threshold voltage, or low threshold voltage transistors. To begin the sleep mode, the master circuit receives a reduced supply voltage and the slave circuit is coupled to ground and is thus turned off. During the sleep mode, the slave circuit experiences virtually no leakage current, and the master circuit experiences a reduced leakage current.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.

Abstract: A disclosed embodiment is a low leakage data retention flip flop comprising a master circuit for retaining data during sleep mode, wherein the master circuit is configured to receive a reduced supply voltage during the sleep mode. The flip flop includes a slave circuit having low threshold voltage transistors, where the slave circuit is turned off during the sleep mode. In various embodiments, the master circuit might utilize high threshold voltage, standard threshold voltage, or low threshold voltage transistors. Similarly, the slave circuit might utilize high threshold voltage, standard threshold voltage, or low threshold voltage transistors. To begin the sleep mode, the master circuit receives a reduced supply voltage and the slave circuit is coupled to ground and is thus turned off. During the sleep mode, the slave circuit experiences virtually no leakage current, and the master circuit experiences a reduced leakage current.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously, and a method of making the multi-port register file memory. The storage elements are arranged in N rows and M columns and store data, each column having at least one output channel or circuit. Two read port pairs are coupled to each of the storage elements and a plurality of differential sensing devices or circuits. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and at least one of the sensing device. The method of forming the multi-port register file memory comprises determining the number of storage elements and arranging the storage elements in the N rows and M columns, each column having an output channel.

Abstract: Aspects of the invention provide a self-biasing differential amplifier. The self-biasing differential amplifier may include a first input stage and a biasing transistor pair coupled to the first input stage. A second input stage may be coupled to the first input stage and the biasing transistor pair. The first input stage of the self-biasing differential amplifier may include a first PMOS transistor coupled to a first NMOS transistor in an inverter arrangement. The second input stage may include a second PMOS transistor coupled to a second NMOS transistor. The biasing transistor pair may include a third PMOS transistor coupled to a third NMOS transistor.

Abstract: The present invention relates to storage element. At least one read port is coupled to the storage element and a sensing device is coupled to the read port, where the read port is coupled to the storage element in an isolated manner. The sensing device is adapted to sense a small voltage swing. The sensing device includes two inverters comprising input offset and gain stages.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.

Abstract: Aspects of the invention provide a self-biasing differential amplifier. The self-biasing differential amplifier may include a first input stage and a biasing transistor pair coupled to the first input stage. A second input stage may be coupled to the first input stage and the biasing transistor pair. The first input stage of the self-biasing differential amplifier may include a first PMOS transistor coupled to a first NMOS transistor in an inverter arrangement. The second input stage may include a second PMOS transistor coupled to a second NMOS transistor. The biasing transistor pair may include a third PMOS transistor coupled to a third NMOS transistor.

Abstract: The present invention relates to a method for improving speed and increasing performance in a multi-port register file memory or SRAM including at least one storage element and other circuitry that operate synchronously or asynchronously. The method comprises differentially sensing a small voltage swing in the multi-port memory using a two-stage analog-style sense amplifier including at least one trip-level-shifted inverter device.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.

Abstract: The present invention relates to a multi-port register file memory including a plurality of storage elements in columns. The storage elements are arranged in rows and columns and store data. At least one read port is coupled to each of the storage elements and a sensing device is coupled to the read port. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A pair of series transistors coupled together act as the read port while a column mux circuit is coupled to each column and the sensing device. The sensing device includes two inverters comprising input offset and gain stages. An offset device biases the local bitlines at a voltage close to the sense amplifier trip point.

Abstract: Devices and methods relating to a multi-port register file memory including a plurality of storage elements in columns are disclosed. The storage elements are arranged in rows and columns and store data. At least one read port is coupled to each of the storage elements and a sensing device is coupled to the read port. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A pair of series transistors coupled together act as the read port while a column mux circuit is coupled to each column and the sensing device. The sensing device includes two inverters comprising input offset and gain stages. An offset device biases the local bitlines at a voltage close to the sense amplifier trip point.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.

Abstract: The present invention relates to a multi-port register file memory including a plurality of storage elements in columns. The storage elements are arranged in rows and columns and store data. At least one read port is coupled to each of the storage elements and a sensing device is coupled to the read port. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A pair of series transistors coupled together act as the read port while a column mux circuit is coupled to each column and the sensing device. The sensing device includes two inverters comprising input offset and gain stages. An offset device biases the local bitlines at a voltage close to the sense amplifier trip point.