Abstract: Doped quartz glass components for use in a plasma-assisted manufacturing process contain at least one dopant which is capable of reacting with fluorine to form a fluoride compound, and the fluoride compound has a boiling point higher than that of SiF4. The doped quartz glass component has high dry-etch resistance and low particle formation, and has uniform etch removal when used in a plasma-assisted manufacturing process. The doped quartz glass has a microhomogeneity defined by (a) a surface roughness with an Ra value of less than 20 nm after the surface has been subjected to a dry-etching procedure as specified in the description, or (b) a dopant distribution with a lateral concentration profile in which maxima of the dopant concentration are at an average distance apart of less than 30 ?m.

Abstract: A UV lamp including a filter material of doped quartz glass is provided that effects a transparency as high as possible for operating radiation in the ultraviolet spectral range above 210 nm together with low transparency in the wavelength range below about 190 nm. The filter material of doped quartz glass includes at least 99 wt. % of SiO2 and Al2O3, wherein the Al2O3 portion is in the range of 2 wt. % to 4 wt. The filter material has an edge wavelength at a wavelength below 190 nm and a spectral transmission of 80% mm?1 or higher at a wavelength of 210 nm.

Abstract: A UV lamp including a filter material of doped quartz glass is provided that effects a transparency as high as possible for operating radiation in the ultraviolet spectral range above 210 nm together with low transparency in the wavelength range below about 190 nm. The filter material of doped quartz glass includes at least 99 wt. % of SiO2 and Al2O3, wherein the Al2O3 portion is in the range of 2 wt. % to 4 wt. The filter material has an edge wavelength at a wavelength below 190 nm and a spectral transmission of 80% mm?1 or higher at a wavelength of 210 nm.