Patents by Inventor Mark Stinson

Mark Stinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SILICON WAFER ETCHING PROCESS AND COMPOSITION
    Publication number: 20080099717
    Abstract: A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
    Type: Application
    Filed: January 2, 2008
    Publication date: May 1, 2008
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Mark Stinson, Henry Erk, Guoqiang (David) Zhang
  • Dressing a Wafer Polishing Pad
    Publication number: 20080009231
    Abstract: A dressing apparatus for dressing a polishing pad includes a dressing member engageable with the polishing pad. The dressing apparatus is adapted to change the amount of force exerted by the dressing member on the polishing pad as the dressing member moves radially along the polishing pad. A controller for controlling the dressing apparatus has pre-programmed recipes that are selectable based on the radial profile of a measured polished wafer.
    Type: Application
    Filed: June 29, 2007
    Publication date: January 10, 2008
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Mark Stinson, Madhavan Esayanur, Dennis Buese, Emanuele Corsi, Ezio Bovio, Antonio Rinaldi, Larry Flannery
  • Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
    Publication number: 20060075960
    Abstract: A process for nucleating and growing oxygen precipitates in a silicon wafer, including subjecting a wafer having a non-uniform concentration of crystal lattice vacancies with the concentration of vacancies in the bulk layer being greater than the concentration of vacancies in the surface layer to a non-isothermal heat treatment to form of a denuded zone in the surface layer and to cause the formation and stabilization of oxygen precipitates having an effective radial size 0.5 nm to 30 nm in the bulk layer. The process optionally includes subjecting the stabilized wafer to a high temperature thermal process (e.g. epitaxial deposition, rapid thermal oxidation, rapid thermal nitridation and etc.) at temperatures in the range of 1000 OC to 1275 OC without causing the dissolution of the stabilized oxygen precipitates.
    Type: Application
    Filed: November 21, 2005
    Publication date: April 13, 2006
    Applicant: MEMC Electronic Materials, Inc.
    Inventors: Marco Borgini, Daniela Gambaro, Marco Ravani, Michael Ries, Laura Sacchetti, Robert Standley, Robert Falster, Mark Stinson
  • Silicon wafer etching process and composition
    Publication number: 20060011588
    Abstract: A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
    Type: Application
    Filed: June 14, 2005
    Publication date: January 19, 2006
    Inventors: Mark Stinson, Henry Erk, Guoqiang Zhang, Mick Bjelopavlic, Alexis Grabbe, Jozef Vermeire, Judith Schmidt, Thomas Doane, James Capstick
  • Senior golf grip
    Patent number: D445158
    Type: Grant
    Filed: November 7, 2000
    Date of Patent: July 17, 2001
    Inventor: Mark A. Stinson