Abstract: A design structure. The design structure includes: a first set of FETs having a designed first Vt and a second set of FETs having a designed second Vt, the first Vt different from the second Vt; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit configured to generate a compare signal based on a performance measurement of the first monitor circuit and of the second monitor circuit; a control unit responsive to the compare signal and configured to generate a control signal regulator based on the compare signal; and an adjustable voltage regulator responsive to the control signal and configured to voltage bias wells of FETs of the second set of FETs, the value of the voltage bias applied based on the control signal.

Abstract: Disclosed are embodiments of a method and an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.

Abstract: A method for providing quality control on wafers running on a manufacturing line is disclosed. The resistances on a group of manufacturing test structures within a wafer running on a wafer manufacturing line are initially measured. Then, an actual distribution value is obtained based on the result of the measured resistances on the group of manufacturing test structures. The difference between the actual distribution value and a predetermined distribution value is recorded. The predetermined distribution value is previously obtained based on a ground rule resistance. Next, the resistances on a group of design test structures within the wafer are measured. The measured resistances of the group of design test structures are correlated to the measured resistances of the group of manufacturing test structures in order to obtain an offset value.

Abstract: A structure and associated method to control a flow of data on a semiconductor device. A transmitter, receiver and transmission line are formed within the semiconductor device. The transmitter, receiver, and transmission line are adapted to control data transfer between a first core and a second core within the semiconductor device. The transmitter is adapted to send a signal over the transmission line to the receiver adapted to receive the signal. The receiver is further adapted to create an impedance mismatch to indicate that the second core is unable to transfer the data. The transmitter is adapted to detect the impedance mismatch.