Patents by Inventor Mark Teepe
Mark Teepe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11827037Abstract: A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.Type: GrantFiled: August 23, 2021Date of Patent: November 28, 2023Assignee: Xerox CorporationInventors: Joerg Martini, Christopher Chua, Zhihong Yang, Mark Teepe, Patrick Y. Maeda, Sourobh Raychaudhuri, Elif Karatay, Noble M. Johnson, David K. Biegelsen, Joseph Lee
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Publication number: 20230055149Abstract: A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.Type: ApplicationFiled: August 23, 2021Publication date: February 23, 2023Inventors: Joerg Martini, Christopher Chua, Zhihong Yang, Mark Teepe, Patrick Y. Maeda, Sourobh Raychaudhuri, Elif Karatay, Noble M. Johnson, David K. Biegelsen, Joseph Lee
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Publication number: 20230056416Abstract: A method of transferring a semiconductor epi layer onto a metal host substrate is described. An epi layer of a semiconductor chip (e.g., semiconductor laser array) including a substrate can be mounted onto a planar handle wafer with an adhesive, wherein a backside of the substrate faces upward and away from the epi layer and the planar handle wafer. The backside of the substrate can be treated to substantially remove the substrate, while leaving the epi layer undamaged (e.g., by polishing to where no more than 20 micrometers of the substrate remains). Metal can be formed on the treated backside resulting in a metalized backside. The planar handle wafer can then be removed from the epi layer by dissolving the adhesive with a solvent, wherein a modified semiconductor chip remains. The semiconductor chip can be annealed to form a backside ohmic contact interface. The semiconductor chip can then be attached to a mechanical block by the ohmic contact interface.Type: ApplicationFiled: August 23, 2021Publication date: February 23, 2023Inventors: Christopher Chua, Joerg Martini, Mark Teepe, Elif Karatay
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Publication number: 20230054034Abstract: A 3D package for semiconductor thermal management can include a 3D submount forming a mechanical block including at least one embedded channel formed within the mechanical block and configured to accept cooling liquid therethrough, a first tubular connection for providing cooling liquid to the at least one embedded channel, and a second tubular connection for removing cooling liquid from the at least one embedded channel. Integrated slots can be provided for accepting and mounting semiconductor components. Mounting holes can be formed in the mechanical block for securing optical elements. At least one semiconductor laser array die can be secured to the mechanical block at the integrated slots, wherein the at least one semiconductor laser array die is kept cool by the cooling liquid flowing through the at least one embedded channel.Type: ApplicationFiled: August 23, 2021Publication date: February 23, 2023Inventors: Christopher Chua, Joerg Martini, Mark Teepe, Yu Wang, Qian Wang
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Patent number: 11519894Abstract: A corrosion monitoring system includes one or more objects coupled to respective portions of a transformer tank. The one or more objects are configured to corrode before the respective portions of the transformer tank. At least one optical sensor is coupled to each of the objects. The at least one optical sensor has an optical output that changes in response to strain of the object. An analyzer is coupled to the at least one optical sensor. The analyzer is configured to perform one or more of detecting and predicting corrosion of the transformer tank based on the output of the at least one optical sensor.Type: GrantFiled: January 18, 2021Date of Patent: December 6, 2022Assignees: Palo Alto Research Company Incorporated, Consolidated Edison Company of New York, Inc.Inventors: Mark Teepe, Todd Karin, Peter Kiesel, Ajay Raghavan, Jane Shin, Bradley Kittrell, Serena Lee
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Publication number: 20210239675Abstract: A corrosion monitoring system includes one or more objects coupled to respective portions of a transformer tank. The one or more objects are configured to corrode before the respective portions of the transformer tank. At least one optical sensor is coupled to each of the objects. The at least one optical sensor has an optical output that changes in response to strain of the object. An analyzer is coupled to the at least one optical sensor. The analyzer is configured to perform one or more of detecting and predicting corrosion of the transformer tank based on the output of the at least one optical sensor.Type: ApplicationFiled: January 18, 2021Publication date: August 5, 2021Inventors: Mark Teepe, Todd Karin, Peter Kiesel, Ajay Raghavan, Jane Shin, Bradley Kittrell, Serena Lee
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Patent number: 10895566Abstract: A corrosion monitoring system includes one or more objects coupled to respective portions of a transformer tank. The one or more objects are configured to corrode before the respective portions of the transformer tank. At least one optical sensor is coupled to each of the objects. The at least one optical sensor has an optical output that changes in response to strain of the object. An analyzer is coupled to the at least one optical sensor. The analyzer is configured to perform one or more of detecting and predicting corrosion of the transformer tank based on the output of the at least one optical sensor.Type: GrantFiled: October 24, 2019Date of Patent: January 19, 2021Assignees: Palo Alto Research Center Incorporated, Consolidated Edison Company of New York, Inc.Inventors: Mark Teepe, Todd Karin, Peter Kiesel, Ajay Raghavan, Jane Shin, Bradley Kittrell, Serena Lee
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Patent number: 10277005Abstract: An edge emitting structure includes an active region configured to generate radiation in response to excitation by a pumping beam incident on the structure. A front facet of the edge emitting structure is configured to emit the radiation generated by the active region. A metallic reflective coating disposed on at least one of the front and rear facets of the edge emitting structure. The metallic reflective coating is configured to reflect the radiation generated by the active region.Type: GrantFiled: September 13, 2017Date of Patent: April 30, 2019Assignee: Palo Alto Research Center IncorporatedInventors: Jorg Jeschke, Thomas Wunderer, Mark Teepe
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Publication number: 20190081457Abstract: An edge emitting structure includes an active region configured to generate radiation in response to excitation by a pumping beam incident on the structure. A front facet of the edge emitting structure is configured to emit the radiation generated by the active region. A metallic reflective coating disposed on at least one of the front and rear facets of the edge emitting structure. The metallic reflective coating is configured to reflect the radiation generated by the active region.Type: ApplicationFiled: September 13, 2017Publication date: March 14, 2019Inventors: Jorg Jeschke, Thomas Wunderer, Mark Teepe
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Patent number: 8330144Abstract: A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.Type: GrantFiled: July 16, 2012Date of Patent: December 11, 2012Assignee: Palo Alto Research Center IncorporatedInventors: Andre Strittmatter, Noble M. Johnson, Mark Teepe, Christopher L. Chua, Zhihong Yang, John E. Northrup
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Publication number: 20120280212Abstract: A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.Type: ApplicationFiled: July 16, 2012Publication date: November 8, 2012Applicant: PALO ALTO RESEARCH CENTER INCORPORATEDInventors: Andre Strittmatter, Noble M. Johnson, Mark Teepe, Christopher L. Chua, Zhihong Yang, John E. Northrup
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Patent number: 8247249Abstract: A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.Type: GrantFiled: June 1, 2010Date of Patent: August 21, 2012Assignee: Palo Alto Research Center IncorporatedInventors: Andre Strittmatter, Noble M. Johnson, Mark Teepe, Christopher L. Chua, Zhihong Yang, John E. Northrup
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Patent number: 8154009Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.Type: GrantFiled: May 4, 2009Date of Patent: April 10, 2012Assignee: Palo Alto Research Center IncorporatedInventors: William S. Wong, Michael A. Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg
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Patent number: 8088637Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.Type: GrantFiled: May 4, 2009Date of Patent: January 3, 2012Assignee: Palo Alto Research Center IncorporatedInventors: William S. Wong, Michael A. Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg
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Publication number: 20110291074Abstract: A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.Type: ApplicationFiled: June 1, 2010Publication date: December 1, 2011Applicant: PALO ALTO RESEARCH CENTER INCORPORATEDInventors: Andre Strittmatter, Noble M. Johnson, Mark Teepe, Christopher L. Chua, Zhihong Yang, John E. Northrup
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Patent number: 7547925Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.Type: GrantFiled: February 17, 2006Date of Patent: June 16, 2009Assignee: Palo Alto Research Center IncorporatedInventors: William S. Wong, Michael A. Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg
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Patent number: 7501299Abstract: A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching.Type: GrantFiled: February 17, 2006Date of Patent: March 10, 2009Assignee: Palo Alto Research Center IncorporatedInventors: William S. Wong, Michael A. Kneissl, Mark Teepe
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Publication number: 20090053845Abstract: A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching.Type: ApplicationFiled: November 5, 2008Publication date: February 26, 2009Applicant: PALO ALTO RESEARCH CENTER INCORPORATEDInventors: William S. Wong, Michael A. Kneissl, Mark Teepe
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Publication number: 20070111345Abstract: A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching.Type: ApplicationFiled: February 17, 2006Publication date: May 17, 2007Inventors: William Wong, Michael Kneissl, Mark Teepe
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Publication number: 20070108456Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.Type: ApplicationFiled: February 17, 2006Publication date: May 17, 2007Inventors: William Wong, Michael Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg