Abstract: A process for fabricating a photolithograpic mask by etching a silicon layer and then forming an absorbent silicide. A protective oxide layer is sputtered on a substrate and is then covered by a layer of silicon. Silicon members and reflective regions are formed from the layer of silicon. Defects in the silicon members are repaired. A layer of nickel is deposited over the silicon members and the reflective regions. The silicon members are converted into an absorbent silicide at a low temperature. The remaining metal and the protective oxide layers are removed resulting in a photolithograpic mask.

Abstract: A process for fabricating a photolithograpic mask by etching a silicon layer and then forming an absorbent silicide. A protective oxide layer is sputtered on a substrate and is then covered by a layer of silicon. Silicon members and reflective regions are formed from the layer of silicon. Defects in the silicon members are repaired. A layer of nickel is deposited over the silicon members and the reflective regions. The silicon members are converted into an absorbent silicide at a low temperature. The remaining metal and the protective oxide layers are removed resulting in a photolithographic mask.

Abstract: A process for fabricating a photolithograpic mask by etching a silicon layer and then forming an absorbent silicide. A protective oxide layer is sputtered on a substrate and is then covered by a layer of silicon. Silicon members and reflective regions are formed from the layer of silicon. Defects in the silicon members are repaired. A layer of nickel is deposited over the silicon members and the reflective regions. The silicon members are converted into an absorbent silicide at a low temperature. The remaining metal and the protective oxide layers are removed resulting in a photolithograpic mask.

Abstract: A low dielectric constant material, suitable for use as an interlayer dielectric in microelectronic structures includes a porous silicon oxide layer. In a further aspect of the present invention, a porous oxide of silicon is formed by the room temperature oxidation of porous silicon. The room temperature oxidation is achieved by exposing a porous silicon layer to a solution of hydrochloric acid, hydrogen peroxide, and water, in the presence of a metal catalyst.