Abstract: A non-local spin valve (NLSV) sensor includes a bearing surface and a detector located proximate to the bearing surface. The NLSV sensor also includes a channel layer located behind the detector relative to the bearing surface, and in a substantially same plane as the detector. The channel layer has a front end that is proximate to the detector and a rear end that is distal to the detector. The NLSV sensor further includes first and second spin injectors, with the first spin injector located proximate to the rear end of the channel layer and positioned above the channel layer, and the second spin injector located proximate the rear end of the channel layer and positioned below the channel layer.

Abstract: A non-local spin valve (NLSV) sensor includes a bearing surface and a detector located proximate to the bearing surface. The NLSV sensor also includes a channel layer located behind the detector relative to the bearing surface, and in a substantially same plane as the detector. The channel layer has a front end that is proximate to the detector and a rear end that is distal to the detector. The NLSV sensor further includes first and second spin injectors, with the first spin injector located proximate to the rear end of the channel layer and positioned above the channel layer, and the second spin injector located proximate the rear end of the channel layer and positioned below the channel layer.

Abstract: A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.

Abstract: A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.

Abstract: A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.

Abstract: A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.

Abstract: A read head includes a bottom shield configured as a bottom electrical contact. A bottom reader stack is disposed on and electrically coupled to the bottom shield. A middle electrical contact is electrically coupled to a top layer of the bottom reader stack. A top reader stack is disposed on the bottom reader stack. A bottom layer of the top reader stack electrically coupled to the middle electrical contact. A top shield is configured as a top electrical contact. The top shield is disposed on and electrically coupled to the top reader stack.

Abstract: A data reader may be configured with a tuned microstructure by initially cooling a substrate to a temperature of 100K or lower and subsequently depositing at least one layer of a data reader on the substrate while the substrate is maintained at the temperature. The tuned microstructure may consist of at least a grain size, grain size distribution, interface quality between multiple layers of the data reader, resistance-area product, and magnetoresistance.

Abstract: A data reader may be configured with a tuned microstructure by initially cooling a substrate to a temperature of 100K or lower and subsequently depositing at least one layer of a data reader on the substrate while the substrate is maintained at the temperature. The tuned microstructure may consist of at least a grain size, grain size distribution, interface quality between multiple layers of the data reader, resistance-area product, and magnetoresistance.

Abstract: A read head includes a bottom shield and a bottom isolation layer that electrically isolates the bottom shield. The read head includes left and right reader stacks having respective bottom layers disposed on at least a portion of the bottom isolation layer. The left and right reader stacks are cross-track adjacent to one another. The read head also includes left and right bottom contacts electrically coupled to respective left and right bottom layers. A top shield is configured as a common top contact electrically coupled to respective top layers of the left and right reader stacks.

Abstract: A magnetic device includes a write element having a write element tip that defines a medium confronting surface. The write element is operable to generate a first field at the medium confronting surface. A conductor is proximate the write element tip and first and second conductive leads are connected to the conductor and configured to deliver a current to the conductor to generate a second field that augments the first field. First and second side elements are disposed on opposite sides of the write element tip in a cross-track direction at the medium confronting surface. At least a portion of the first conductive lead is disposed adjacent the first side element on a side opposite the medium confronting surface, and at least a portion of the second conductive lead is disposed adjacent the second side element on a side opposite the medium confronting surface.

Abstract: An apparatus and associated method provides a magnetic writing element that may have at least a write pole tuned to a predetermined first grain size with a cryogenic substrate temperature. A magnetic shield can be formed with a predetermined second grain size that is tuned with the cryogenic substrate temperature.

Abstract: A later spin valve multi-reader includes at least two spin detectors, a spin injector and a spin diffusion medium. The spin diffusion medium bridges the spin detectors and the spin injector. Each of the spin detectors detects a unique spin accumulation signal.

Abstract: A read head includes a bottom shield and a bottom isolation layer that electrically isolates the bottom shield. The read head includes left and right reader stacks having respective bottom layers disposed on at least a portion of the bottom isolation layer. The left and right reader stacks are cross-track adjacent to one another. The read head also includes left and right bottom contacts electrically coupled to respective left and right bottom layers. A top shield is configured as a common top contact electrically coupled to respective top layers of the left and right reader stacks.

Abstract: A read head includes a bottom shield configured as a bottom electrical contact. A bottom reader stack is disposed on and electrically coupled to the bottom shield. A middle electrical contact is electrically coupled to a top layer of the bottom reader stack. A top reader stack is disposed on the bottom reader stack. A bottom layer of the top reader stack electrically coupled to the middle electrical contact. A top shield is configured as a top electrical contact. The top shield is disposed on and electrically coupled to the top reader stack.

Abstract: A data reader may be configured at least with a magnetic stack that has a first magnetic layer separated from a second magnetic layer by a non-magnetic spacer layer. The first magnetic layer may have an areal extent on an air bearing surface (ABS) that differs from the second magnetic layer while the second magnetic layer can be configured with a first plurality of linear sidewalls that are each angled with respect to a second plurality of linear sidewalls of the first magnetic layer.

Abstract: A data reader may be configured at least with detector and injector stacks that each has a common spin accumulation layer. The detector stack may positioned on an air bearing surface (ABS) while the injector stack is positioned distal the ABS. The injector stack can have a diffusive layer with a larger spin diffusion length than mean free path.

Abstract: A data reader may be configured at least with a magnetic stack positioned on an air bearing surface (ABS) and contacting a spin depolarizing layer that is a minority spin current carrier. The spin depolarizing layer can have a thickness and spin diffusion length corresponding to a net zero spin polarization at an interface of the magnetic stack and spin depolarizing layer.

Abstract: Various embodiments may be generally directed to a magnetic sensor constructed with a decoupling layer that has a predetermined first morphology. A magnetic free layer can be deposited contactingly adjacent to the decoupling layer with the magnetic free layer configured to have at least a first sub-layer having a predetermined second morphology.

Abstract: A method is disclosed for defining discrete magnetic and non-magnetic regions on the magnetic film layer of a storage media substrate. The method applies anodic oxidation of a cobalt-containing magnetic film layer to remove cobalt, followed by controlled deposition of a non-magnetic matrix into the regions where the cobalt has been removed. Deposition may either be electrodeposition, collimated vacuum deposition, or other methods depending upon the composition of the non-magnetic matrix being deposited. The method may be performed in a single electrochemical cell.