Patents by Inventor Mark Twigg

Mark Twigg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
    Publication number: 20070004106
    Abstract: This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
    Type: Application
    Filed: August 2, 2006
    Publication date: January 4, 2007
    Inventors: Martin Peckerar, Richard Henry, Daniel Koleske, Alma Wickenden, Charles Eddy, Ronald Holm, Mark Twigg
  • Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
    Publication number: 20050164475
    Abstract: This invention pertains to e lectronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
    Type: Application
    Filed: January 23, 2004
    Publication date: July 28, 2005
    Inventors: Martin Peckerar, Richard Henry, Daniel Koleske, Alma Wickenden, Charles Eddy, Ronald Holm, Mark Twigg
  • Electronic devices grown on off-axis sapphire substrate
    Patent number: 6265089
    Abstract: An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1-10 micron thick semiconducting film disposed on the nucleating layer.
    Type: Grant
    Filed: July 15, 1999
    Date of Patent: July 24, 2001
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Mohammad Fatemi, Alma E. Wickenden, Daniel D. Koleske, Richard Henry, Mark Twigg