Patents by Inventor Mark Utlaut

Mark Utlaut has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10493559
    Abstract: Laser processing is enhanced by using endpointing or by using a charged particle beam together with a laser. End-pointing uses emissions, such as photons, electrons, ions, or neutral particles, from the substrate to determine when the material under the laser has changed or is about to change. Material removed from the sample can be deflected to avoid deposition onto the laser optics.
    Type: Grant
    Filed: July 8, 2009
    Date of Patent: December 3, 2019
    Assignee: FEI Company
    Inventors: Marcus Straw, David H. Narum, Milos Toth, Mark Utlaut, Guido Knippels, Gerardus Nicolaas Anne Van Veen
  • Patent number: 9478390
    Abstract: A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column. The charged particle beam column assembly includes a platform defining a specimen holding position and has a set of electrostatic lenses each including a set of electrodes. The assembly includes a final electrostatic lens that includes a final electrode that is closest to the specimen holding position. This final electrode defines at least one internal passageway having a terminus that is proximal to and directed toward the specimen holding position.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: October 25, 2016
    Assignee: FEI COMPANY
    Inventors: N. William Parker, Marcus Straw, Jorge Filevich, Aurelien Philippe Jean Maclou Botman, Steven Randolph, Clive Chandler, Mark Utlaut
  • Publication number: 20160032281
    Abstract: A functionalized specimen support for use in charged particle microscopy is provided that includes a specimen support surface configured to support specimens during an interrogation of the specimens with a charged particle microscope, the specimen support surface having functionalized sites, each functionalized site configured to maintain position of a portion of one of the specimens at the functionalized site by way of attachment, attraction, or a combination thereof.
    Type: Application
    Filed: July 31, 2014
    Publication date: February 4, 2016
    Applicant: FEI Company
    Inventors: Mark Utlaut, N. William Parker
  • Publication number: 20150380205
    Abstract: A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column The charged particle beam column assembly includes a platform defining a specimen holding position and has a set of electrostatic lenses each including a set of electrodes. The assembly includes a final electrostatic lens that includes a final electrode that is closest to the specimen holding position. This final electrode defines at least one internal passageway having a terminus that is proximal to and directed toward the specimen holding position.
    Type: Application
    Filed: June 30, 2014
    Publication date: December 31, 2015
    Applicant: FEI Company
    Inventors: N. William Parker, Mark Straw, Jorge Filevich, Aurelien Philippe Jean Maclou Botman, Steven Randolph, Clive Chandler, Mark Utlaut
  • Patent number: 8853592
    Abstract: A charged particle beam and a laser beam are used together to micromachine a substrate. A first beam alters the state of a region of the work piece, and the second beam removes material whose state was altered. In one embodiment, an ion beam can create photon absorbing defects to lower the local ablation threshold, allowing the laser beam to remove material in a region defined by the ion beam. The combination of laser beam and charged particle beam allows the creation of features similar in size to the charged particle beam spot size, at milling rates greater than charged particle processing because of the increased energy provided by the laser beam.
    Type: Grant
    Filed: July 9, 2009
    Date of Patent: October 7, 2014
    Assignee: FEI Company
    Inventors: Marcus Straw, Amin Samsavar, Milos Toth, Mark Utlaut
  • Patent number: 8629416
    Abstract: An improved method for substrate micromachining. Preferred embodiments of the present invention provide improved methods for the utilization of charged particle beam masking and laser ablation. A combination of the advantages of charged particle beam mask fabrication and ultra short pulse laser ablation are used to significantly reduce substrate processing time and improve lateral resolution and aspect ratio of features machined by laser ablation to preferably smaller than the diffraction limit of the machining laser.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: January 14, 2014
    Assignee: FEI Company
    Inventors: Marcus Straw, Milos Toth, Steven Randolph, Michael Lysaght, Mark Utlaut
  • Publication number: 20120200007
    Abstract: An improved method for substrate micromachining. Preferred embodiments of the present invention provide improved methods for the utilization of charged particle beam masking and laser ablation. A combination of the advantages of charged particle beam mask fabrication and ultra short pulse laser ablation are used to significantly reduce substrate processing time and improve lateral resolution and aspect ratio of features machined by laser ablation to preferably smaller than the diffraction limit of the machining laser.
    Type: Application
    Filed: April 18, 2012
    Publication date: August 9, 2012
    Applicant: FEI COMPANY
    Inventors: Marcus Straw, Milos Toth, Steven Randolph, Michael Lysaght, Mark Utlaut
  • Publication number: 20120199738
    Abstract: A secondary particle detector 302 for a charged particle beam system 300 includes a scintillator 304 and a transducer 312, such as a photomultiplier tube, positioned within a vacuum chamber 107. Unlike prior art Everhart-Thornley detectors, the photomultiplier is positioned within the vacuum chamber, which improves detection by eliminating optical couplings and provides flexibility in positioning the detector.
    Type: Application
    Filed: April 18, 2012
    Publication date: August 9, 2012
    Applicant: FEI COMPANY
    Inventors: ROBERT GERLACH, Mostafa Maazouz, Trevor Dingle, Mark Utlaut, James McGinn
  • Publication number: 20120103945
    Abstract: Laser processing is enhanced by using endpointing or by using a charged particle beam together with a laser. End-pointing uses emissions, such as photons, electrons, ions, or neutral particles, from the substrate to determine when the material under the laser has changed or is about to change. Material removed from the sample can be deflected to avoid deposition onto the laser optics.
    Type: Application
    Filed: July 8, 2009
    Publication date: May 3, 2012
    Applicant: FEI COMPANY
    Inventors: Marcus Straw, David H. Narum, Milos Toth, Mark Utlaut, Guido Knippels, Gerardus Nicolaas Van Veen
  • Patent number: 8168961
    Abstract: An improved method for substrate micromachining. Preferred embodiments of the present invention provide improved methods for the utilization of charged particle beam masking and laser ablation. A combination of the advantages of charged particle beam mask fabrication and ultra short pulse laser ablation are used to significantly reduce substrate processing time and improve lateral resolution and aspect ratio of features machined by laser ablation to preferably smaller than the diffraction limit of the machining laser.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: May 1, 2012
    Assignee: FEI Company
    Inventors: Marcus Straw, Milos Toth, Steven Randolph, Michael Lysaght, Mark Utlaut
  • Patent number: 8164059
    Abstract: A secondary particle detector 302 for a charged particle beam system 300 includes a scintillator 304 and a transducer 312, such as a photomultiplier tube, positioned within a vacuum chamber 107. Unlike prior art Everhart-Thornley detectors, the photomultiplier is positioned within the vacuum chamber, which improves detection by eliminating optical couplings and provides flexibility in positioning the detector.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: April 24, 2012
    Assignee: FEI Company
    Inventors: Robert Gerlach, Mostafa Maazouz, Trevor Dingle, Mark Utlaut, James McGinn
  • Publication number: 20120080407
    Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.
    Type: Application
    Filed: October 4, 2011
    Publication date: April 5, 2012
    Applicant: FEI COMPANY
    Inventors: Noel Smith, Clive D. Chandler, Mark Utlaut, Paul P. Tesch, Dave Tuggle
  • Patent number: 8076650
    Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.
    Type: Grant
    Filed: July 16, 2007
    Date of Patent: December 13, 2011
    Assignee: FEI Company
    Inventors: Noel Smith, Clive D. Chandler, Mark Utlaut, Paul P. Tesch, Dave Tuggle
  • Publication number: 20110163068
    Abstract: A multibeam system in which a charged particle beam and one or more additional beams can be directed to the target within a single vacuum chamber. A first beam colunm preferably produces a beam for rapid processing, and a second beam column produces a beam for more precise processing. A third beam column can be used to produce a beam useful for forming an image of the sample while producing little or no change in the sample.
    Type: Application
    Filed: January 9, 2009
    Publication date: July 7, 2011
    Inventors: Mark Utlaut, Noel Smith, Paul P. Tesch, Tom Miller, David H. Narum, David Tuggle, Lawrence Scipioni
  • Publication number: 20110115129
    Abstract: A charged particle beam and a laser beam are used together to micromachine a substrate. A first beam alters the state of a region of the work piece, and the second beam removes material whose state was altered. In one embodiment, an ion beam can create photon absorbing defects to lower the local ablation threshold, allowing the laser beam to remove material in a region defined by the ion beam. The combination of laser beam and charged particle beam allows the creation of features similar in size to the charged particle beam spot size, at milling rates greater than charged particle processing because of the increased energy provided by the laser beam.
    Type: Application
    Filed: July 9, 2009
    Publication date: May 19, 2011
    Applicant: FEI COMPANY
    Inventors: Marcus Straw, Amin Samsavar, Milos Toth, Mark Utlaut
  • Publication number: 20100127190
    Abstract: An improved method for substrate micromachining. Preferred embodiments of the present invention provide improved methods for the utilization of charged particle beam masking and laser ablation. A combination of the advantages of charged particle beam mask fabrication and ultra short pulse laser ablation are used to significantly reduce substrate processing time and improve lateral resolution and aspect ratio of features machined by laser ablation to preferably smaller than the diffraction limit of the machining laser.
    Type: Application
    Filed: November 26, 2008
    Publication date: May 27, 2010
    Applicant: FEI COMPANY
    Inventors: MARCUS STRAW, Milos Toth, Steven Randolph, Michael Lysaght, Mark Utlaut
  • Patent number: 6414307
    Abstract: The sensitivity of a secondary ion mass spectrometer (SIMS) is increased by using water vapor to enhance the yield of positive secondary ions sputtered by a primary focused ion beam. Water vapor is injected through a needle that is positioned close to the sample and electrically biased to reduce interference with secondary ion collection field. The sensitivity is enhanced for metals in particular, which tend to be sputtered as positive ions.
    Type: Grant
    Filed: July 9, 1999
    Date of Patent: July 2, 2002
    Assignee: FEI Company
    Inventors: Robert L. Gerlach, Locke Christman, Mark Utlaut