Abstract: A coupling member for use in priming a fluid pump of an internal combustion engine, the coupling member including a first end, a second end, and a cylindrical length therebetween. The first end of the coupling member may be configured to axially engage a drive shaft of a rotational drive, a plurality of fins may extend along at least a portion of the cylindrical length, and the plurality of fins may be configured to engage an oil drive gear of an internal combustion engine. Each fin from the plurality of fins may protrude radially from an outer surface of the coupling member, and the coupling member may be further configured to translate a rotational force provided by the rotational drive to the oil drive gear of the internal combustion engine.

Abstract: A coupling member for use in priming a fluid pump of an internal combustion engine, the coupling member including a first end, a second end, and a cylindrical length therebetween. The first end of the coupling member may be configured to axially engage a drive shaft of a rotational drive, a plurality of fins may extend along at least a portion of the cylindrical length, and the plurality of fins may be configured to engage a crank shaft of an internal combustion engine. Each fin from the plurality of fins may protrude radially from an outer surface of the coupling member, and the coupling member may be further configured to translate a rotational force provided by the rotational drive to the crank shaft of the internal combustion engine.

Abstract: A light performance monitoring device and optionally integrated controller includes a monitor module that directly monitors energy usage of at least one energy load to generate at least one measurement of energy usage; a storage module stores a series of baseline values of energy usage of the energy load, a comparator module compares energy measurements made at predetermined intervals with the baseline values, and a notification module notifies a designated recipient that there is a deviation from the baseline values consistent with a burned out or non-operational light fixture, including but not limited to light bulbs or ballast devices. A control module optionally integrated with the light performance monitoring device can be operatively coupled to the monitor module to control energy usage by the at least one energy load via a data link in a pre-determined manner that is based on the at least one measurement of energy usage.

Abstract: An integrated circuit die contains a total of at least 10,000 bipolar logica cells that dissipate at least 75 watts of power. To supply such a large amount of power to the logic cells, thin sputtered power busses of 3 .mu.m thickness overlie the logic cells; an insulating layer surrounds the power busses; openings in the insulating layer defined plating regions on the power busses; an electroplating base film lies throughout the plating regions; and, a thick plated conductor, of at least 16 .mu.m thickness, lies on the electroplating base film. By supplying power to the bipolar logic cells via the composite structure of the thin power busses and thick plated conductors, a noise margin problem in the logic cell output signals is avoided. With 16 .mu.m thick plated conductors, the total number of logic cells on the die can be increased until their total power dissipation reaches 75 watts. With 21 .mu.m thick plated conductors, total die power can be increased to 100 watts.

Abstract: In the disclosed method, dopant atoms of a first conductivity type are implanted into the surface of a semiconductor substrate to form a channel region of each transistor having a relatively high dopant density at a predetermined depth below the surface and a substantially lower dopant density at the surface. This eliminates reachthrough in the channel without adversely increasing the channels threshold voltage. Thereafter, dopant atoms of a second conductivity type are implanted into the substrate to form source and drain regions adjacent to the channels having a depth of less than 0.3 .mu.m below the surface. This minimizes the radius of curvature and corresponding depletion width at the respective junctions with the channel. Subsequently, a patterned insulating layer is formed on said surface at temperatures that are far below the insulating layer's flow point. This avoids diffusing the distribution of the implanted dopant atoms.

Abstract: This disclosure relates to a V-MOS field effect transistor which is provided with enhanced source capacitance to provide a single transistor dynamic memory cell. The formation of the source area is achieved by masking the silicon substrate, opening an aperture in the mask and then etching the silicon substrate in such a manner as to undercut the mask so that the mask provides a shield to subsequent ion implanting of the source area. Both P and N type dopants can be separately implanted with different energy levels so as to form an enhanced PN junction capacitance for the device. Such a field effect transistor can be achieved without the formation of a graded dopant concentration in the channel between the source and drain areas of the transistor.