Abstract: The present disclosure relates to semiconductor structures and, more particularly, to partitioned substrates with interconnect bridge structures and methods of manufacture. The structure includes: a plurality of substrates; at least one chip bonded and electrically connected to each of the plurality of substrates; and an interconnect bridge that physically connects the plurality of substrates and electrically connects each of the plurality of chips bonded to each of the plurality of substrates.

Abstract: A barrier or “crackstop” that is configured to conduct electrical signals. These configurations may form a wall around integrated, active circuitry of a semiconductor die. This wall may include a conductor that follows a three-dimensional pathway from one side to the other side of the wall. This pathway may have sections that overlap, or double-back, so that portions of the conductor overlap along their individual length. These sections prevent crack propagation internal to the wall.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to partitioned substrates with interconnect bridge structures and methods of manufacture. The structure includes: a plurality of substrates; at least one chip bonded and electrically connected to each of the plurality of substrates; and an interconnect bridge that physically connects the plurality of substrates and electrically connects each of the plurality of chips bonded to each of the plurality of substrates.

Abstract: A barrier or “crackstop” that is configured to conduct electrical signals. These configurations may form a wall around integrated, active circuitry of a semiconductor die. This wall may include a conductor that follows a three-dimensional pathway from one side to the other side of the wall. This pathway may have sections that overlap, or double-back, so that portions of the conductor overlap along their individual length. These sections prevent crack propagation internal to the wall.

Abstract: Disclosed is a multi-chip module (MCM) with redundant chip-to-chip communication connection(s) to minimize the need to discard a chip-mounting layer due to defective signal traces. The MCM includes at least first and second chips mounted on the chip-mounting layer. The chip-mounting layer includes signal traces that are electrically connected between first and second links on the first and second chips, respectively, to form communication connections including at least one redundant communication connection. Instead of being directly connected to the chip-to-chip communication connections, first and second interfaces on the first and second chips are connected via first and second multiplexors, respectively, to selected ones of multiple chip-to-chip communication connections. By employing the multiplexors and the redundant chip-to-chip communication connection(s), chip-to-chip communication connection(s) with defective signal trace(s) can be bypassed.

Abstract: An IC chip structure including a plurality of IC chips electrically connected to one another in back-end-of-line (BEOL) interconnect layer of the structure is disclosed. The IC structure may include openings in crack-stop structures surrounding the IC chips and a interconnect wire extending between the IC chips through the openings. A packaging structure for utilizing the IC structure where at least one IC chip is inoperable is also disclosed. The structure may include a first bond pad array on a top surface of a packaging substrate including operable bond pads connected to an operable IC chip and structural support bond pads connected to the inoperable IC chip; a second bond pad array on a bottom surface of the substrate including operable bond pads connected to a single IC chip printed circuit board; and an interconnect structure for connecting the operable bond pads of the first and second bond pad arrays.

Abstract: An IC chip structure including a plurality of IC chips electrically connected to one another in back-end-of-line (BEOL) interconnect layer of the structure is disclosed. The IC structure may include openings in crack-stop structures surrounding the IC chips and a interconnect wire extending between the IC chips through the openings. A packaging structure for utilizing the IC structure where at least one IC chip is inoperable is also disclosed. The structure may include a first bond pad array on a top surface of a packaging substrate including operable bond pads connected to an operable IC chip and structural support bond pads connected to the inoperable IC chip; a second bond pad array on a bottom surface of the substrate including operable bond pads connected to a single IC chip printed circuit board; and an interconnect structure for connecting the operable bond pads of the first and second bond pad arrays.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an interconnect structure to connect between different package configurations and methods of manufacture. The structure includes an interconnect comprising a plurality of conductive levels and columns configured into a grid pattern within an insulator material, the plurality of conductive levels and columns aligned to connect to different package configurations; and a control circuit that provides a signal to the interconnect to connect to a combination of the different package configurations.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an interconnect structure to connect between different package configurations and methods of manufacture. The structure includes an interconnect comprising a plurality of conductive levels and columns configured into a grid pattern within an insulator material, the plurality of conductive levels and columns aligned to connect to different package configurations; and a control circuit that provides a signal to the interconnect to connect to a combination of the different package configurations.

Abstract: The present disclosure relates to interface structures and, more particularly, to integrated interface structures with both parallel and serial interfaces and methods of manufacture. The integrated interface structure includes: a substrate; a plurality of serial interface connections integrated on the substrate; and a plurality of parallel interface connections on the integrated substrate and within spaces between sets of the plurality of serial interface connections.

Abstract: The present disclosure relates to memory structures and, more particularly, to double bandwidth algorithmic memory array structures and methods of use. The memory array includes: a plurality of memory banks each of which includes addressable storage units; a redundant array of independent disks (RAID) bank which stores parity bits corresponding to data written into any of the plurality of memory banks at a same address; and a plurality of XOR gates in which data written into any of the plurality of memory banks is cascaded therethrough to refresh the parity bits in the RAID bank.

Abstract: Systems and methods for optimizing timing/power risk SVB using a customer-supplied, non-linear voltage slope. Chips are manufactured according to an integrated circuit design. The minimum operating voltage and hardware variations for each device in the design is determined and a process distribution for the chips is divided into process windows. Vmax and Vmin to support system frequency are determined for each process window. Vmin vs. process-bin mean and sigma sensitivity is calculated using information about specific devices. The voltage for each process window that generates Vmin for specific devices is identified. Power at the slow end and fast end of each process window is evaluated using the voltage to support system frequency. Pmax is determined. Vmax for each process window that generates Pmax is determined. A voltage is identified between Vmin and Vmax that maximizes the timing margin for system frequency while minimizing risk for Pmax.

Abstract: The present disclosure relates to memory structures and, more particularly, to double bandwidth algorithmic memory array structures and methods of use. The memory array includes: a plurality of memory banks each of which includes addressable storage units; a redundant array of independent disks (RAID) bank which stores parity bits corresponding to data written into any of the plurality of memory banks at a same address; and a plurality of XOR gates in which data written into any of the plurality of memory banks is cascaded therethrough to refresh the parity bits in the RAID bank.

Abstract: Systems and methods for optimizing timing/power risk SVB using a customer-supplied, non-linear voltage slope. Chips are manufactured according to an integrated circuit design. The minimum operating voltage and hardware variations for each device in the design is determined and a process distribution for the chips is divided into process windows. Vmax and Vmin to support system frequency are determined for each process window. Vmin vs. process-bin mean and sigma sensitivity is calculated using information about specific devices. The voltage for each process window that generates Vmin for specific devices is identified. Power at the slow end and fast end of each process window is evaluated using the voltage to support system frequency. Pmax is determined. Vmax for each process window that generates Pmax is determined. A voltage is identified between Vmin and Vmax that maximizes the timing margin for system frequency while minimizing risk for Pmax.

Abstract: Design methods and systems disclosed use a process window-aware timing analysis of an integrated circuit (IC) chip design for improved accuracy. Specifically, a process distribution for the design is defined and divided into process windows. Timing parameter adjustment factors are assigned to the process windows. A timing analysis is performed in order to acquire an initial solution for a timing parameter (e.g., delay, slack or slew). For each specific process window, this initial solution is adjusted by the predetermined timing parameter adjustment factor assigned to that specific process window. The adjusted solutions for the different process windows account for process window-to-process window variations in the widths of distribution of a process parameter (e.g., leakage power) and can be used to predict whether IC chips manufactured according the IC chip design will meet established timing requirements (e.g., required arrival times (RATs)) regardless of where they fall within the process distribution.

Abstract: Design methods and systems disclosed use a process window-aware timing analysis of an integrated circuit (IC) chip design for improved accuracy. Specifically, a process distribution for the design is defined and divided into process windows. Timing parameter adjustment factors are assigned to the process windows. A timing analysis is performed in order to acquire an initial solution for a timing parameter (e.g., delay, slack or slew). For each specific process window, this initial solution is adjusted by the predetermined timing parameter adjustment factor assigned to that specific process window. The adjusted solutions for the different process windows account for process window-to-process window variations in the widths of distribution of a process parameter (e.g., leakage power) and can be used to predict whether IC chips manufactured according the IC chip design will meet established timing requirements (e.g., required arrival times (RATs)) regardless of where they fall within the process distribution.

Abstract: Disclosed are a system and method that control integrated circuit chip temperature using frequency scaling based on predetermined temperature-frequency settings. During integrated circuit chip operation, a controller causes a variable clock signal generator to adjust the frequency of a clock signal that coordinates operations of an integrated circuit chip based on the temperature of the integrated circuit chip and on predetermined temperature-frequency settings. The temperature-frequency settings are predetermined in order to ensure that the frequency of the clock signal, as adjusted, remains sufficiently high to meet a chip performance specification, but sufficiently low to prevent the temperature from rising above a predetermined maximum temperature in order to limit power consumption. Also disclosed is a method of generating such temperature-frequency settings during timing analysis.

Abstract: A computing device for a generating composite view for an intellectual property (IP) core may obtain constraints for multiple application specific integrated circuits (ASIC) designs in which the IP core is used; and determine composite constraints for the IP core based on the constraints for the multiple ASIC designs. The composite constraints may be within all constraints for the multiple ASIC designs. A freedom of change to update the particular IP core may be identified based on the composite constraints.

Abstract: A computing device for a generating composite view for an intellectual property (IP) core may obtain constraints for multiple application specific integrated circuits (ASIC) designs in which the IP core is used; and determine composite constraints for the IP core based on the constraints for the multiple ASIC designs. The composite constraints may be within all constraints for the multiple ASIC designs. A freedom of change to update the particular IP core may be identified based on the composite constraints.

Abstract: Disclosed are a system and method that control integrated circuit chip temperature using frequency scaling based on predetermined temperature-frequency settings. During integrated circuit chip operation, a controller causes a variable clock signal generator to adjust the frequency of a clock signal that coordinates operations of an integrated circuit chip based on the temperature of the integrated circuit chip and on predetermined temperature-frequency settings. The temperature-frequency settings are predetermined in order to ensure that the frequency of the clock signal, as adjusted, remains sufficiently high to meet a chip performance specification, but sufficiently low to prevent the temperature from rising above a predetermined maximum temperature in order to limit power consumption. Also disclosed is a method of generating such temperature-frequency settings during timing analysis.