Patents by Inventor Mark W. Wanlass
Mark W. Wanlass has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9484480Abstract: High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.Type: GrantFiled: June 24, 2014Date of Patent: November 1, 2016Assignee: Alliance For Sustainable Energy, LLCInventors: Mark W Wanlass, Jeffrey J Carapella, Myles A Steiner
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Patent number: 9293615Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.Type: GrantFiled: September 16, 2015Date of Patent: March 22, 2016Assignee: Alliance for Sustainable Energy, LLCInventors: Mark W. Wanlass, Jeffrey J. Carapella
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Publication number: 20160056317Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.Type: ApplicationFiled: September 16, 2015Publication date: February 25, 2016Inventors: Mark W. WANLASS, Jeffrey J. CARAPELLA
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Patent number: 9231135Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.Type: GrantFiled: May 22, 2014Date of Patent: January 5, 2016Assignee: Alliance for Sustainable Energy, LLCInventors: Mark W. Wanlass, Jeffrey J. Carapella
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Publication number: 20140332848Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.Type: ApplicationFiled: May 22, 2014Publication date: November 13, 2014Applicant: Alliance for Sustainable Energy, LLCInventors: Mark W. WANLASS, Jeffrey J. CARAPELLA
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Patent number: 8772628Abstract: High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.Type: GrantFiled: January 29, 2009Date of Patent: July 8, 2014Assignee: Alliance for sustainable Energy, LLCInventors: Mark W. Wanlass, Jeffrey J. Carapella, Myles A. Steiner
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Patent number: 8772623Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.Type: GrantFiled: October 30, 2012Date of Patent: July 8, 2014Assignee: Alliance for Sustainable Energy, LLCInventors: Mark W. Wanlass, Jeffrey J. Carapella
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Patent number: 8735202Abstract: A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.Type: GrantFiled: September 23, 2011Date of Patent: May 27, 2014Assignee: Alliance for Sustainable Energy, LLCInventor: Mark W. Wanlass
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Patent number: 8691663Abstract: A method of processing an epistructure or processing a semiconductor device including associating a conformal and flexible handle with the epistructure and removing the epistructure and handle as a unit from the parent substrate. The method further includes causing the epistructure and handle unit to conform to a shape that differs from the shape the epistructure otherwise inherently assumes upon removal from the parent substrate. A device prepared according to the disclosed methods.Type: GrantFiled: November 6, 2009Date of Patent: April 8, 2014Assignee: Alliance for Sustainable Energy, LLCInventor: Mark W. Wanlass
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Publication number: 20140069493Abstract: A multijunction photovoltaic device (300) is provided. The multijunction photovoltaic device (300) includes a substrate (301) and one or more intermediate sub-cells (303a-303c) coupled to the substrate (301). The multijunction photovoltaic device (300) further includes a top sub-cell (304) comprising an AlxIn1-xP alloy coupled to the one or more intermediate sub-cells (303a-303c) and lattice mismatched to the substrate (301).Type: ApplicationFiled: May 7, 2012Publication date: March 13, 2014Applicant: Alliance for Sustainable Energy, LLCInventors: Kirstin Alberi, Angelo Mascarenhas, Mark W. Wanlass
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Publication number: 20130048064Abstract: Mechanically stacked multijunction solar cells are provided. In one embodiment, a mechanically stacked, multijunction solar cell comprises: a first solar cell having a first bandgap; a second solar cell having a second bandgap; and a plurality of spaced apart metal pillars sandwiched between the first solar cell and the second solar cell.Type: ApplicationFiled: August 28, 2012Publication date: February 28, 2013Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: William Edwin McMAHON, James Scott WARD, Chieh-Ting LIN, Mark W. WANLASS
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Patent number: 8173891Abstract: Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.Type: GrantFiled: May 15, 2008Date of Patent: May 8, 2012Assignee: Alliance for Sustainable Energy, LLCInventors: Mark W. Wanlass, Angelo Mascarenhas
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Publication number: 20120015469Abstract: A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.Type: ApplicationFiled: September 23, 2011Publication date: January 19, 2012Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventor: Mark W. Wanlass
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Patent number: 8067687Abstract: A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.Type: GrantFiled: December 30, 2004Date of Patent: November 29, 2011Assignee: Alliance for Sustainable Energy, LLCInventor: Mark W. Wanlass
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Publication number: 20110284054Abstract: A spectrum-splitting photovoltaic converter system (10) includes a high energy cell (20) and a low energy cell (30) positioned in adjacent, non-coplanar relation to each other, wherein the high energy cell (20) is the spectral splitting optical component and utilizes a combination of a dual purpose optical coating (40) comprising an anti-reflection coating, a highly reflective back surface reflector (42), and a dielectric spacer (44) to maximize transmittance of high energy into the high energy cell (20) for conversion to electric energy and to maximize reflection of low energy from the high energy cell (20) to the low energy cell (30) for conversion to electrical energy.Type: ApplicationFiled: January 28, 2009Publication date: November 24, 2011Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventor: Mark W. Wanlass
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Publication number: 20110277828Abstract: A method for improving the overall quantum efficiency and output voltage in solar cells using spontaneous ordered semiconductor alloy absorbers to form a DOH below the front or above the back surface of the cell.Type: ApplicationFiled: January 29, 2010Publication date: November 17, 2011Applicant: Alliance for Sustainable Energy, LLCInventors: Mark W. Wanlass, Angelo Mascarenhas, Jeffrey J. Carapella
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Publication number: 20110186115Abstract: High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.Type: ApplicationFiled: January 29, 2009Publication date: August 4, 2011Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Mark W. Wanlass, Jeffrey J Carapella, Myles A. Steiner
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Publication number: 20110073887Abstract: Optoelectronic devices, junctions and methods of fabricating a device or junction where the emitter layer is of an indirect-band-gap material and the base layer is of a direct-band-gap material. The device or junction may have, among other structures and layers, a base layer of a first semiconductor material having a first conductivity type and further having a direct band gap and an emitter layer forming a junction with the base layer. In this embodiment, the emitter layer may be of a second semiconductor material having a second conductivity type and further having an indirect band gap. The optoelectronic device may have the semiconductor material of the emitter layer substantially lattice mismatched with the semiconductor material of the base layer in bulk form. Alternatively, the emitter layer may be substantially lattice matched with the base layer.Type: ApplicationFiled: September 25, 2009Publication date: March 31, 2011Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: MARK W. WANLASS, Angelo Mascarenhas
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Publication number: 20090229659Abstract: Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.Type: ApplicationFiled: May 15, 2008Publication date: September 17, 2009Applicant: MIDWEST RESEARCH INSTITUTEInventors: Mark W. Wanlass, Angelo Mascarenhas
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Patent number: 7095050Abstract: Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.Type: GrantFiled: February 28, 2002Date of Patent: August 22, 2006Assignee: Midwest Research InstituteInventors: Mark W. Wanlass, Angelo Mascarenhas