Abstract: An oscillator circuit includes an oscillation circuit producing a RAMP signal and at least two control signals STATE2 and STATE3, and a comparator comparing an externally produced error signal ERR with the RAMP signal. When the ERR signal is between minimum and maximum levels of the RAMP signal, the duty cycle of a PWMOUT signal of the oscillator circuit varies as a function of the difference between the ERR and RAMP signals, and preferably accounts for approximately 85% of the total period. When the ERR signal is less than or equal to the minimum level of the RAMP signal, the duty cycle of the PWMOUT signal is fixed at a first value which is preferably approximately 5% of the total duty cycle. When the ERR signal is greater than or equal to the maximum level of the RAMP signal, the duty cycle of the PWMOUT signal is fixed at a second value which is preferably approximately 90% of the total period.

Abstract: The invention relates to circuitry for protecting n-channel load driving devices from reverse voltage conditions and for inhibiting the flow of destructive currents through such devices under reverse voltage conditions. According to one embodiment of the invention, a circuit is provided for protecting an n-channel high side load driving device from negative battery and negative transient operating conditions.

Abstract: A transient suppressor comprises a self-triggered silicon control rectifier (SCR) that forms a drive circuit for an NPN power transistor. The SCR and the NPN power transistor are combined, along with other elements, into an integrated circuit (IC) by a junction isolated BiCMOS process. The SCR self-triggers upon being subjected to an inductive flyback condition created by an inductive load and renders the NPN transistor conductive, thereby allowing the NPN power transistor, having a relatively large semiconductor region, to effectively snub the current created by the negative feedback condition. The transient suppressor may be used in either a high-side or low-side driver arrangement and the SCR/NPN power transistor combination may further be combined with load driving and other circuitry on a single integrated circuit.

Abstract: A transient suppressor comprises a self-triggered silicon control rectifier (SCR) that forms a drive circuit for an NPN power transistor. The SCR and the NPN power transistor are combined, along with other elements, into an integrated circuit (IC) by a junction isolated BiCMOS process. The SCR self-triggers upon being subjected to an inductive flyback condition created by an inductive load and renders the NPN transistor conductive, thereby allowing the NPN power transistor, having a relatively large semiconductor region, to effectively snub the current created by the negative feedback condition. The transient suppressor may be used in either a high-side or low-side driver arrangement and the SCR/NPN power transistor combination may further be combined with load driving and other circuitry on a single integrated circuit.

Abstract: Circuitry for controlling load current, in accordance with the present invention, utilizes a load drive transistor configuration operable to provide a first load current path having a first fraction of load current flowing therethrough and a second load current path having a second smaller fraction of load current flowing therethrough. The circuit includes a sense resistor associated with the load drive transistor to detect various load current threshold values. In order to reduce debiasing effects of the sense resistor upon the second load current path of the load drive transistor, a compensation resistor is provided between drive inputs associated with each of the two current paths. The compensation resistor has a compensation voltage established thereacross which is operable to negate the debiasing effect of the sense resistor on the load driving device.

Abstract: Disclosed are devices having emitters having resistive emitter diffusion sections are in a radial pattern. Such devices include vertical PNP power devices. The radial pattern of holes defines resistive emitter diffusion sections between adjacent holes. The resistive emitter diffusion sections result in a lower emitter ballast resistance due to the higher emitter sheet resistance of PNP devices. This allows all the periphery of the emitter to be active, not just two sides. The device has improved emitter ballast resistance while at the same time remaining efficient with low saturation resistance.

Abstract: A transient suppressor comprises a self-triggered silicon control rectifier (SCR) that forms a drive circuit for an NPN power transistor. The SCR and the NPN power transistor are combined, along with other elements, into an integrated circuit (IC) by a junction isolated BiCMOS process. The SCR self-triggers upon being subjected to an inductive flyback condition created by an inductive load and renders the NPN transistor conductive, thereby allowing the NPN power transistor, having a relatively large semiconductor region, to effectively snub the current created by the negative feedback condition. The transient suppressor may be used in either a high-side or low-side driver arrangement and the SCR/NPN power transistor combination may further be combined with load driving and other circuitry on a single integrated circuit.

Abstract: An accurate integrated oscillator circuit includes a first circuit generating a substantially temperature independent, or a linearly temperature dependent, reference current and a second circuit which is programmable to incrementally increase the reference current to a desired current level. A third circuit includes first and second capacitors and an oscillator output switchable between first and second output levels. The third circuit is responsive to a first charge value on the first capacitor, due to the reference current flowing therethrough, to switch the oscillator output to the first level while resetting the second capacitor to its uncharged state, and to a second charge value on the second capacitor, due to the reference current flowing therethrough, to switch the oscillator output to the second level while resetting the first capacitor to its uncharged state. The oscillator circuit is preferably formed of a single integrated circuit and has an adjustable center frequency.

Abstract: An integrated pulse-width modulation circuit with conditional temperature protection circuitry includes logic circuitry, a power output device, thermal shutdown circuitry to disable the power output device when the die temperature exceeds a predetermined limit, and a masking circuit that disables the thermal shutdown circuit during short term thermal increases such as those that occur when an inductive load turn off event takes place.