Abstract: In accordance with some embodiments of the present disclosure, a thrust washer and a diffuser for use in a downhole electrical submersible pump are disclosed. The pump may include a shaft and a motor communicatively coupled to the shaft. The motor may be operable to rotate the shaft. The pump may further include an impeller coupled to the shaft. The impeller may contain a balance ring, a balance hole, and a hub. The pump may further include a diffuser disposed adjacent to the impeller. The pump may further include a thrust washer coupled to the impeller. The thrust washer may be located between the balance ring and the hub without blocking the balance hole to allow fluid flow through the impeller and the diffuser. The pump may further include a discharge operable to direct fluid flow out of the multi-stage electrical submersible pump.

Abstract: In accordance with some embodiments of the present disclosure, a thrust washer and a diffuser for use in a downhole electrical submersible pump are disclosed. The pump may include a shaft and a motor communicatively coupled to the shaft. The motor may be operable to rotate the shaft. The pump may further include an impeller coupled to the shaft. The impeller may contain a balance ring, a balance hole, and a hub. The pump may further include a diffuser disposed adjacent to the impeller. The pump may further include a thrust washer coupled to the impeller. The thrust washer may be located between the balance ring and the hub without blocking the balance hole to allow fluid flow through the impeller and the diffuser. The pump may further include a discharge operable to direct fluid flow out of the multi-stage electrical submersible pump.

Abstract: A particle reduction apparatus comprises a radiation absorption zone for receiving a gaseous flow carrying particulate matter. A transparent shield surrounds at least a portion of the radiation absorption zone. A radiation source for generating radiation and for directing the radiation into the radiation absorption zone to promote reduction of the particulate matter is provided, and an insulation layer at least partially surrounds the radiation source.

Abstract: Determination of steam quality by passing one or more laser beams through steam in a steam chamber and directly determining a total number of vapor molecules and a total number of water molecules based on absorption of radiation in the one or more laser beams by the water vapor phase and the liquid water phase in the steam. Specific volumes of water vapor phase and liquid water phase in the steam using the total numbers of water vapor and liquid water molecules are determined and the quality of the steam is calculated based on the specific volumes of the water vapor phase and the liquid water phase in steam. One embodiment comprises a narrow linewidth laser for measuring steam quality and another embodiment comprises multiple broadband lasers for measuring steam quality.

Abstract: Determination of steam quality by passing one or more laser beams through steam in a steam chamber and directly determining a total number of vapor molecules and a total number of water molecules based on absorption of radiation in the one or more laser beams by the water vapor phase and the liquid water phase in the steam. Specific volumes of water vapor phase and liquid water phase in the steam using the total numbers of water vapor and liquid water molecules are determined and the quality of the steam is calculated based on the specific volumes of the water vapor phase and the liquid water phase in steam. One embodiment comprises a narrow linewidth laser for measuring steam quality and another embodiment comprises multiple broadband lasers for measuring steam quality.

Abstract: Determination of steam quality by passing one or more laser beams through steam in a steam chamber and directly determining a total number of vapor molecules and a total number of water molecules based on absorption of radiation in the one or more laser beams by the water vapor phase and the liquid water phase in the steam. Specific volumes of water vapor phase and liquid water phase in the steam using the total numbers of water vapor and liquid water molecules are determined and the quality of the steam is calculated based on the specific volumes of the water vapor phase and the liquid water phase in steam. One embodiment comprises a narrow linewidth laser for measuring steam quality and another embodiment comprises multiple broadband lasers for measuring steam quality.

Abstract: Determination of steam quality by passing one or more laser beams through steam in a steam chamber and directly determining a total number of vapor molecules and a total number of water molecules based on absorption of radiation in the one or more laser beams by the water vapor phase and the liquid water phase in the steam. Specific volumes of water vapor phase and liquid water phase in the steam using the total numbers of water vapor and liquid water molecules are determined and the quality of the steam is calculated based on the specific volumes of the water vapor phase and the liquid water phase in steam. One embodiment comprises a narrow linewidth laser for measuring steam quality and another embodiment comprises multiple broadband lasers for measuring steam quality.

Abstract: A particle reduction apparatus comprises a radiation absorption zone for receiving a gaseous flow carrying particulate matter. A transparent shield surrounds at least a portion of the radiation absorption zone. A radiation source for generating radiation and for directing the radiation into the radiation absorption zone to promote reduction of the particulate matter is provided, and an insulation layer at least partially surrounds the radiation source.

Abstract: A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.