Patents by Inventor Mark Yam

Mark Yam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220193969
    Abstract: An apparatus, system, and method of forming a mold insert for an injection molding operation, comprising: providing a design of an injection mold part; analyzing, by a predictive model, the design to determine a conformal cooling arrangement for a mold insert for forming the injection mold part; and forming the mold insert including the conformal cooling arrangement.
    Type: Application
    Filed: December 17, 2021
    Publication date: June 23, 2022
    Inventors: Zakary Tyler Smith, Mark Yam, Sudarshan Bharat Shetty, Andrew J. Hudak, IV, Richard Warren Blossom, Edward Fu, YenChi Chang
  • Publication number: 20210053147
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Application
    Filed: November 5, 2020
    Publication date: February 25, 2021
    Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron Muir HUNTER, Bruce E. ADAMS, Joseph M. RANISH
  • Patent number: 10857623
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: December 8, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Muir Hunter, Bruce E. Adams, Joseph M. Ranish
  • Patent number: 10840100
    Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: November 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
  • Publication number: 20190139773
    Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Application
    Filed: November 26, 2018
    Publication date: May 9, 2019
    Inventors: Paul CAREY, Aaron Muir HUNTER, Dean JENNINGS, Abhilash J. MAYUR, Stephen MOFFATT, William SCHAFFER, Timothy N. THOMAS, Mark YAM
  • Patent number: 10141191
    Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: November 27, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
  • Publication number: 20180099353
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Application
    Filed: December 11, 2017
    Publication date: April 12, 2018
    Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron Muir HUNTER, Bruce E. ADAMS, Joseph M. RANISH
  • Patent number: 9839976
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: December 12, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Muir Hunter, Bruce E. Adams, Joseph Michael Ranish
  • Patent number: 9737959
    Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: August 22, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Dean C. Jennings, Mark Yam, Abhilash J. Mayur, Vernon Behrens, Paul A. O'Brien, Leonid M. Teritski, Alexander Goldin
  • Publication number: 20150069028
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Application
    Filed: November 5, 2014
    Publication date: March 12, 2015
    Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron Muir HUNTER, Bruce E. ADAMS, Joseph Michael RANISH
  • Publication number: 20150053659
    Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.
    Type: Application
    Filed: September 5, 2014
    Publication date: February 26, 2015
    Inventors: Dean C. Jennings, Mark Yam, Abhilash J. Mayur, Vernon Behrens, Paul A. O'Brien, Leonid M. Teritski, Alexander Goldin
  • Patent number: 8951348
    Abstract: The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: February 10, 2015
    Assignee: Novellus Systems, Inc.
    Inventors: Krishnan Shrinivasan, Feng Wang, George Kamian, Steve Gentile, Mark Yam
  • Patent number: 8907247
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: December 9, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
  • Patent number: 8890024
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: November 18, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
  • Patent number: 8829393
    Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: September 9, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dean C. Jennings, Mark Yam, Abhilash J. Mayur, Vernon Behrens, Paul A. O'Brien, Leonid M. Tertitski, Alexander Goldin
  • Patent number: 8765618
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: July 1, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Muir Hunter, Bruce E. Adams, Joseph M. Ranish
  • Patent number: 8653408
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: February 18, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
  • Patent number: 8518838
    Abstract: Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: August 27, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Paul Carey, Aaron Muir Hunter, Dean Jennings, Abhilash J. Mayur, Stephen Moffatt, William Schaffer, Timothy N. Thomas, Mark Yam
  • Publication number: 20120261395
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Application
    Filed: May 31, 2012
    Publication date: October 18, 2012
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
  • Patent number: 8288685
    Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: October 16, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Dean C. Jennings, Mark Yam, Abhilash J. Mayur, Vernon Behrens, Paul A. O'Brien, Leonid M. Tertitski, Alexander Goldin