Patents by Inventor Markku Ylilammi

Markku Ylilammi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11913859
    Abstract: According to an example aspect of the present invention, there is provided an apparatus comprising a volume for receiving a gas sample; and an ultrasonic transducer; wherein the ultrasonic transducer is caused to generate a standing wave to the volume, said standing wave comprising at least one particle trapping zone for trapping particles carried by the gas sample, and to release particles trapped to the at least particle trapping zone by decreasing power of the standing wave to at least one lower power level and/or switching off the standing wave.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: February 27, 2024
    Assignee: Teknologian tutkimuskeskus VTT Oy
    Inventors: Panu Koppinen, Teuvo Sillanpää, Markku Ylilammi
  • Patent number: 11894827
    Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer. Each of the first and the second resonators includes a top electrode on the top surface, and a bottom electrode on the bottom surface of the piezoelectric layer. At least one of each of the first and the second resonators' electrodes is electrically connected to the acoustic wave filter element. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency different from the first frequency.
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: February 6, 2024
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Tapani Makkonen, Markku Ylilammi, Tuomas Pensala, James Dekker
  • Patent number: 11870408
    Abstract: Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack.
    Type: Grant
    Filed: July 1, 2021
    Date of Patent: January 9, 2024
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Markku Ylilammi, Tapani Makkonen, Tuomas Pensala
  • Publication number: 20220393661
    Abstract: An acoustic wave filter device with two-stage acoustic wave filters is provided. Each of the two stages includes a respective acoustic wave filter element. A first acoustic wave filter element (100a) includes a first input electrode (150a), a first output electrode (174a), and a first counter electrode (120a). The first input electrode and the first output electrode are located on a top surface of piezoelectric layer (650), and the first counter electrode is located on a bottom surface of the piezoelectric layer. A second acoustic wave filter element (100b) includes a second input electrode (154b), a second output electrode (174b), and a second counter electrode (120b). The second input electrode and the second output electrode are located on the top surface of the piezoelectric layer, and the second counter electrode is located on a bottom surface of the piezoelectric layer. The two acoustic wave filter elements are connected in series through a common floating electrode (602).
    Type: Application
    Filed: October 22, 2020
    Publication date: December 8, 2022
    Inventors: Markku Ylilammi, Tapani Makkonen
  • Publication number: 20220216852
    Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer and an counter-electrode on the bottom surface of the piezoelectric layer. Each of the first and the second resonators includes a resonator electrode on the top surface of the piezoelectric layer and a resonator counter-electrode on the bottom surface of the piezoelectric layer. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency that is different from the first frequency.
    Type: Application
    Filed: March 24, 2022
    Publication date: July 7, 2022
    Inventors: Tapani Makkonen, Markku Ylilammi, Tuomas Pensala, James Dekker
  • Patent number: 11381220
    Abstract: Acoustic wave filter devices is disclosed. The device includes a piezoelectric layer, an input electrode and an output electrode located on a top surface of the piezoelectric layer and physically separated from one another, and a counter electrode having a top surface connected to a bottom surface of the piezoelectric layer. The input and output electrodes each include a base and at least one extension extending from the base. The at least one extension of the input electrode extending alongside and in a generally opposite direction to and separated by a gap width from an adjacent extension of the at least one extensions of the output electrode. In some embodiments, the at least one extension of the input or output electrodes has a width that can changes from a first end of the at least one extension to a second end.
    Type: Grant
    Filed: August 21, 2020
    Date of Patent: July 5, 2022
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Tapani Makkonen, Tuomas Pensala, Markku Ylilammi
  • Patent number: 11290083
    Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigitated input electrodes and output electrodes located on a top surface of a piezoelectric layer and an counter-electrode on the bottom surface of the piezoelectric layer. Each of the first and the second resonators includes a resonator electrode on the top surface of the piezoelectric layer and a resonator counter-electrode on the bottom surface of the piezoelectric layer. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency that is different from the first frequency.
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: March 29, 2022
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Tapani Makkonen, Markku Ylilammi, Tuomas Pensala, James Dekker
  • Patent number: 11223341
    Abstract: Acoustic wave filter devices are disclosed. In an embodiment, the device includes an acoustic wave resonator and a reflecting layer located below the acoustic wave resonator. The wave resonator includes an input electrode including a first electrode and a counter electrode, a piezoelectric layer sandwiched between the first electrode and the counter electrode, and an output electrode. The piezoelectric layer has a first region covered by the first or the output electrode, and a second region not covered by any of the first and the output electrode. The first region has a second order acoustic thickness-shear resonance (TS2) mode dispersion curve with a first minimum frequency, and the second region has a TS2 mode dispersion curve with a second minimum frequency. The reflecting layer's thickness is such that a difference between the first minimum frequency and the second minimum frequency is less than 2% of a filter center frequency.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: January 11, 2022
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Tapani Makkonen, Tuomas Pensala, Markku Ylilammi
  • Publication number: 20210408996
    Abstract: Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack.
    Type: Application
    Filed: July 1, 2021
    Publication date: December 30, 2021
    Inventors: Markku Ylilammi, Tapani Makkonen, Tuomas Pensala
  • Publication number: 20210359659
    Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer. Each of the first and the second resonators includes a top electrode on the top surface, and a bottom electrode on the bottom surface of the piezoelectric layer. At least one of each of the first and the second resonators' electrodes is electrically connected to the acoustic wave filter element. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency different from the first frequency.
    Type: Application
    Filed: July 19, 2021
    Publication date: November 18, 2021
    Inventors: Tapani Makkonen, Markku Ylilammi, Tuomas Pensala, James Dekker
  • Publication number: 20210247288
    Abstract: According to an example aspect of the present invention, there is provided an apparatus, comprising: a channel for receiving gas; thermophoretic unit configured to create a temperature gradient in the channel, and a particle detector for detecting particles in the gas on the basis of particle landing positions in the channel.
    Type: Application
    Filed: May 9, 2019
    Publication date: August 12, 2021
    Inventors: Panu Koppinen, Teuvo Sillanpää, Markku Ylilammi
  • Patent number: 11088670
    Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer. Each of the first and the second resonators includes a top electrode on the top surface, and a bottom electrode on the bottom surface of the piezoelectric layer. At least one of each of the first and the second resonators' electrodes is electrically connected to the acoustic wave filter element. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency different from the first frequency.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: August 10, 2021
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Tapani Makkonen, Markku Ylilammi, Tuomas Pensala, James Dekker
  • Patent number: 11057013
    Abstract: Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: July 6, 2021
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Markku Ylilammi, Tapani Makkonen, Tuomas Pensala
  • Publication number: 20210148803
    Abstract: According to an example aspect of the present invention, there is provided an apparatus comprising a microelectromechanical, MEMS, capacitor comprising two plates and a gap between the plates, a gas conveyor configured to cause gas to flow through the gap, and readout circuitry configured to measure a capacitance of the MEMS capacitor.
    Type: Application
    Filed: May 22, 2019
    Publication date: May 20, 2021
    Inventors: Panu Koppinen, Teuvo Sillanpää, Markku Ylilammi
  • Publication number: 20210116332
    Abstract: According to an example aspect of the present invention, there is provided an apparatus comprising a volume for receiving a gas sample; and an ultrasonic transducer; wherein the ultrasonic transducer is caused to generate a standing wave to the volume, said standing wave comprising at least one particle trapping zone for trapping particles carried by the gas sample, and to release particles trapped to the at least particle trapping zone by decreasing power of the standing wave to at least one lower power level and/or switching off the standing wave.
    Type: Application
    Filed: April 15, 2019
    Publication date: April 22, 2021
    Inventors: Panu Koppinen, Teuvo Sillanpää, Markku Ylilammi
  • Publication number: 20210119600
    Abstract: Acoustic wave filter devices are disclosed. In an embodiment, the device includes an acoustic wave resonator and a reflecting layer located below the acoustic wave resonator. The wave resonator includes an input electrode including a first electrode and a counter electrode, a piezoelectric layer sandwiched between the first electrode and the counter electrode, and an output electrode. The piezoelectric layer has a first region covered by the first or the output electrode, and a second region not covered by any of the first and the output electrode. The first region has a second order acoustic thickness-shear resonance (TS2) mode dispersion curve with a first minimum frequency, and the second region has a TS2 mode dispersion curve with a second minimum frequency. The reflecting layer's thickness is such that a difference between the first minimum frequency and the second minimum frequency is less than 2% of a filter center frequency.
    Type: Application
    Filed: October 22, 2019
    Publication date: April 22, 2021
    Inventors: Tapani Makkonen, Tuomas Pensala, Markku Ylilammi
  • Publication number: 20210075392
    Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer. Each of the first and the second resonators includes a top electrode on the top surface, and a bottom electrode on the bottom surface of the piezoelectric layer. At least one of each of the first and the second resonators' electrodes is electrically connected to the acoustic wave filter element. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency different from the first frequency.
    Type: Application
    Filed: September 11, 2019
    Publication date: March 11, 2021
    Inventors: Tapani Makkonen, Markku Ylilammi, Tuomas Pensala, James Dekker
  • Publication number: 20210075401
    Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigitated input electrodes and output electrodes located on a top surface of a piezoelectric layer and an counter-electrode on the bottom surface of the piezoelectric layer. Each of the first and the second resonators includes a resonator electrode on the top surface of the piezoelectric layer and a resonator counter-electrode on the bottom surface of the piezoelectric layer. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency that is different from the first frequency.
    Type: Application
    Filed: September 28, 2020
    Publication date: March 11, 2021
    Inventors: Tapani Makkonen, Markku Ylilammi, Tuomas Pensala, James Dekker
  • Publication number: 20210036677
    Abstract: Acoustic wave filter devices is disclosed. The device includes a piezoelectric layer, an input electrode and an output electrode located on a top surface of the piezoelectric layer and physically separated from one another, and a counter electrode having a top surface connected to a bottom surface of the piezoelectric layer. The input and output electrodes each include a base and at least one extension extending from the base. The at least one extension of the input electrode extending alongside and in a generally opposite direction to and separated by a gap width from an adjacent extension of the at least one extensions of the output electrode. In some embodiments, the at least one extension of the input or output electrodes has a width that can changes from a first end of the at least one extension to a second end.
    Type: Application
    Filed: August 21, 2020
    Publication date: February 4, 2021
    Inventors: Tapani Makkonen, Tuomas Pensala, Markku Ylilammi
  • Patent number: 10790801
    Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer and an counter-electrode on the bottom surface of the piezoelectric layer. Each of the first and the second resonators includes a resonator electrode on the top surface of the piezoelectric layer and a resonator counter-electrode on the bottom surface of the piezoelectric layer. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency that is different from the first frequency.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: September 29, 2020
    Assignee: VTT Technical Research Centre of Finland Ltd
    Inventors: Tapani Makkonen, Markku Ylilammi, Tuomas Pensala, James Dekker