Abstract: In various aspects, a method for operating a memory cell arrangement is provided, including: providing a set of supply voltages to one or more sets of memory cell drivers to write one or more memory cells of the memory cell arrangement; wherein providing the set of supply voltages includes: ramping a first supply voltage of the set of supply voltages to a first predefined output voltage level, and ramping a second supply voltage of the set of supply voltages to a second predefined output voltage level dependent upon the first supply voltage, the first predefined output voltage level and the second predefined output voltage level defining a first predefined ratio, wherein, during the ramping of the first supply voltage and of the second supply voltage, a first ratio of the first supply voltage to the second supply voltage is substantially equal to or less than the first predefined ratio.

Abstract: In various embodiments, a memory cell arrangement is provided including a memory cell driver and one or more memory cells, wherein one or more control nodes of each of the one or more memory cells are electrically conductively connected to one or more output nodes of the memory cell driver. The memory cell driver may include: a first supply node to receive a first supply voltage and a second supply node to receive a second supply voltage, a plurality of input nodes to receive a plurality of input voltages, one or more output nodes, and a logic circuit connected to the first supply node, the second supply node, the plurality of input nodes, and the one or more output nodes, wherein the logic circuit includes one or more logic gates and is configured to connect via the one or more logic gates either the first supply node or the second supply node to the one or more output nodes in response to the plurality of input voltages.

Abstract: A ferroelectric memory circuit (100) includes: a memory cell (102), wherein a memory state (102s) of the memory cell (102) is switchable between a first memory state and a second memory state, the memory cell (102) further configured to output an electrical current (101) in response to receiving a readout voltage (103); and a sense circuit (104) configured to output an output voltage (105) based on the result of integrating the electrical current (101) output by the memory cell (102), wherein the output voltage (105) represents whether the memory state (102s) is the first memory state or the second memory state.

Abstract: An electronic circuit may be operated based on two or more supply voltages ramped in accordance with a digital control scheme, the digital control scheme may include ramping a voltage value of a first output voltage generated via a first digitally controlled voltage converter from a first target voltage value to a third target voltage value such that the voltage value of the first output voltage matches a second target voltage value during a first ramp interval and the third target voltage value during a second ramp interval; and ramping a voltage value of a second output voltage generated via a second digitally controlled voltage converter from the first target voltage value to the second target voltage value such that the voltage value of the second output voltage matches the second target voltage value during the first ramp interval, and the second target voltage value during the second ramp interval.

Abstract: A memory cell circuit is provided that may include: a memory cell, the memory cell including a ferroelectric structure; a first control terminal and a second control terminal connected to the memory cell, the first control terminal and the second control terminal being configured to allow an operation of the memory cell; and a first auxiliary terminal and a second auxiliary terminal connected to the memory cell, the first auxiliary terminal and the second auxiliary terminal being configured to provide an auxiliary voltage to the ferroelectric structure.

Abstract: In various aspects, a method for operating a memory cell arrangement is provided, including: providing a set of supply voltages to one or more sets of memory cell drivers to write one or more memory cells of the memory cell arrangement; wherein providing the set of supply voltages includes: ramping a first supply voltage of the set of supply voltages to a first predefined output voltage level, and ramping a second supply voltage of the set of supply voltages to a second predefined output voltage level dependent upon the first supply voltage, the first predefined output voltage level and the second predefined output voltage level defining a first predefined ratio, wherein, during the ramping of the first supply voltage and of the second supply voltage, a first ratio of the first supply voltage to the second supply voltage is substantially equal to or less than the first predefined ratio.

Abstract: According to various aspects, a memory cell comprise: a first terminal, a second terminal, a third terminal, a fourth terminal, and a fifth terminal to control the memory cell; a first memory element (FeFET1) and a second memory element (FeFET2), the first memory element comprising a first capacitive memory structure electrically connected to the first terminal and a first field-effect transistor structure coupled to the first capacitive memory structure and electrically connected to the third terminal and the forth terminal; the second memory element comprising a second capacitive memory structure electrically connected to the second terminal and a second field-effect transistor structure coupled to the second capacitive memory structure and electrically connected to the third terminal and the fifth terminal.

Abstract: In various aspects, a voltage supply circuit may include a first controlled voltage converter circuit including a first voltage converter and a first control circuit, wherein the first control circuit is configured to receive an input voltage and control the first voltage converter to output a first output voltage having a predefined relationship to the received input voltage; and a second controlled voltage converter circuit including a second voltage converter and a second control circuit, wherein the second control circuit is configured to receive the first output voltage and control the second voltage converter to output a second output voltage having a predefined relationship to the received first output voltage.

Abstract: According to various aspects, a memory cell comprise: a first terminal, a second terminal, a third terminal, a fourth terminal, and a fifth terminal to control the memory cell; a first memory element (FeFET1) and a second memory element (FeFET2), the first memory element comprising a first capacitive memory structure electrically connected to the first terminal and a first field-effect transistor structure coupled to the first capacitive memory structure and electrically connected to the third terminal and the forth terminal; the second memory element comprising a second capacitive memory structure electrically connected to the second terminal and a second field-effect transistor structure coupled to the second capacitive memory structure and electrically connected to the third terminal and the fifth terminal.

Abstract: A voltage converter circuit may include: a first input node; a second input node; a first output node; a second output node; one or more charge pumps that convert a first input voltage supplied to the first input node up to a first output voltage and convert a second input voltage supplied to the second input node down to a second output voltage; and a control circuit to control the one or more charge pumps according to two operational modes. In the first operation mode, the control circuit supplies the first input voltage to the first input node, leaves the second input node floating, and outputs the first output voltage at the first output node. In the second operation mode, the control circuit supplies the second input voltage to the second input node, leaves the first input node floating, and outputs the second output voltage at the second output node.

Abstract: A memory cell arrangement is provided that may include: at least one memory cell and a read-out circuit. The memory cell includes a first terminal, a second terminal, a third terminal, and a field-effect transistor structure being connected to the first terminal, the second terminal, and the third terminal. The read-out circuit is configured to carry out a read-out operation to read out a memory state of the memory cell, the read-out operation including: providing a first voltage at the first terminal, a second voltage at the second terminal, and a third voltage at the third terminal such that the field-effect transistor structure is in a high-resistivity state and such that a leakage current through the first terminal and/or through the second terminal is generated, and sensing the leakage current to determine the memory state of the memory element.

Abstract: A voltage converter circuit may include: a first input node; a second input node; a first output node; a second output node; one or more charge pumps that convert a first input voltage supplied to the first input node up to a first output voltage and convert a second input voltage supplied to the second input node down to a second output voltage; and a control circuit to control the one or more charge pumps according to two operational modes. In the first operation mode, the control circuit supplies the first input voltage to the first input node, leaves the second input node floating, and outputs the first output voltage at the first output node. In the second operation mode, the control circuit supplies the second input voltage to the second input node, leaves the first input node floating, and outputs the second output voltage at the second output node.

Abstract: A memory cell circuit is provided that may include: a memory cell, the memory cell including a ferroelectric structure; a first control terminal and a second control terminal connected to the memory cell, the first control terminal and the second control terminal being configured to allow an operation of the memory cell; and a first auxiliary terminal and a second auxiliary terminal connected to the memory cell, the first auxiliary terminal and the second auxiliary terminal being configured to provide an auxiliary voltage to the ferroelectric structure.

Abstract: An electronic circuit may be operated based on two or more supply voltages ramped in accordance with a digital control scheme, the digital control scheme may include ramping a voltage value of a first output voltage generated via a first digitally controlled voltage converter from a first target voltage value to a third target voltage value such that the voltage value of the first output voltage matches a second target voltage value during a first ramp interval and the third target voltage value during a second ramp interval; and ramping a voltage value of a second output voltage generated via a second digitally controlled voltage converter from the first target voltage value to the second target voltage value such that the voltage value of the second output voltage matches the second target voltage value during the first ramp interval, and the second target voltage value during the second ramp interval.

Abstract: A memory cell arrangement is provided that may include: a read-out circuit and a memory cell including: a first terminal, a second terminal, and a third terminal; the memory cell may be configured to control current flow between the second terminal and the first terminal as a function of a first voltage present at the first terminal, a third voltage applied at the third terminal, and a memory state of the memory cell. The read-out circuit is configured to: generate a characteristic voltage at the bitline by applying the third voltage at the third terminal and a second voltage at the second terminal, the characteristic voltage representing the memory state of the memory cell, and to determine the memory state of the memory cell based on sensing the characteristic voltage.

Abstract: In various embodiments, a memory cell arrangement is provided including a memory cell driver and one or more memory cells, wherein one or more control nodes of each of the one or more memory cells are electrically conductively connected to one or more output nodes of the memory cell driver. The memory cell driver may include: a first supply node to receive a first supply voltage and a second supply node to receive a second supply voltage, a plurality of input nodes to receive a plurality of input voltages, one or more output nodes, and a logic circuit connected to the first supply node, the second supply node, the plurality of input nodes, and the one or more output nodes, wherein the logic circuit includes one or more logic gates and is configured to connect via the one or more logic gates either the first supply node or the second supply node to the one or more output nodes in response to the plurality of input voltages.

Abstract: In various aspects, a voltage supply circuit may include a first controlled voltage converter circuit including a first voltage converter and a first control circuit, wherein the first control circuit is configured to receive an input voltage and control the first voltage converter to output a first output voltage having a predefined relationship to the received input voltage; and a second controlled voltage converter circuit including a second voltage converter and a second control circuit, wherein the second control circuit is configured to receive the first output voltage and control the second voltage converter to output a second output voltage having a predefined relationship to the received first output voltage.

Abstract: In various embodiments, a ternary memory cell is provided, the ternary memory cell including: a first ferroelectric memory cell and a second ferroelectric memory cell in a parallel or serial arrangement, wherein each of the first ferroelectric memory cell and the second ferroelectric memory cell is switchable into a first ferroelectric memory cell state and a second ferroelectric memory cell state; and wherein a first matching state is defined by the first ferroelectric memory cell in the first ferroelectric memory cell state and the second ferroelectric memory cell in the second ferroelectric memory cell state, wherein a second matching state is defined by the first ferroelectric memory cell in the second ferroelectric memory cell state and the second ferroelectric memory cell in the first ferroelectric memory cell state, and wherein a third matching state is defined by the first ferroelectric memory cell and the second ferroelectric memory cell being in the same ferroelectric memory cell state.

Abstract: According to various embodiments, a memory cell may include: a field-effect transistor structure comprising a channel region and a gate structure disposed at the channel region, the gate structure comprising a gate electrode structure and a gate isolation structure disposed between the gate electrode structure and the channel region; and a memory structure comprising a first electrode structure, a second electrode structure, and at least one remanent-polarizable layer disposed between the first electrode structure and the second electrode structure; wherein the first electrode structure of the memory structure is electrically conductively connected to the gate electrode structure of the field-effect transistor structure.

Abstract: According to various embodiments, a memory cell may include: a field-effect transistor structure comprising a channel region and a gate structure disposed at the channel region, the gate structure comprising a gate electrode structure and a gate isolation structure disposed between the gate electrode structure and the channel region; and a memory structure comprising a first electrode structure, a second electrode structure, and at least one remanent-polarizable layer disposed between the first electrode structure and the second electrode structure; wherein the first electrode structure of the memory structure is electrically conductively connected to the gate electrode structure of the field-effect transistor structure.