Abstract: This disclosure describes a microelectromechanical device comprising at least one mobile rotor. The rotor comprises a rotor measurement region and a rotor stopper region and a rotor isolation region which connects the rotor measurement region mechanically to the rotor stopper region and isolates the rotor measurement region electrically from the rotor stopper region.

Abstract: A microelectromechanical device comprising a mobile rotor in a silicon wafer. The rotor comprises one or more high-density regions. The one or more high-density regions in the rotor comprise at least one high-density material which has a higher density than silicon. The one or more high-density regions have been formed in the silicon wafer by filling one or more fill trenches in the rotor with the at least one high-density material. The one or more fill trenches have a depth/width aspect ratio of at least 10, and the one or more fill trenches have been filled by depositing the high-density material into the fill trenches in an atomic layer deposition (ALD) process.

Abstract: This disclosure describes a microelectromechanical device comprising at least one mobile rotor. The rotor comprises a rotor measurement region and a rotor stopper region and a rotor isolation region which connects the rotor measurement region mechanically to the rotor stopper region and isolates the rotor measurement region electrically from the rotor stopper region.

Abstract: A microelectromechanical device comprising a mobile rotor in a silicon wafer. The rotor comprises one or more high-density regions. The one or more high-density regions in the rotor comprise at least one high-density material which has a higher density than silicon. The one or more high-density regions have been formed in the silicon wafer by filling one or more fill trenches in the rotor with the at least one high-density material. The one or more fill trenches have a depth/width aspect ratio of at least 10, and the one or more fill trenches have been filled by depositing the high-density material into the fill trenches in an atomic layer deposition (ALD) process.

Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.