Patents by Inventor Markondeya Raj Pulugurtha

Markondeya Raj Pulugurtha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11756985
    Abstract: An exemplary embodiment of the present invention provides a planar inductor including a substrate, a first magnetic layer, a conductive coil, and a second magnetic layer. The first magnetic layer can be disposed on at least a portion of the substrate. The conductive coil can be disposed on a first portion of the first magnetic layer. The second magnetic layer can be disposed on a second portion of the first magnetic layer and on at least a portion of the conductive coil.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: September 12, 2023
    Assignees: Georgia Tech Research Corporation, NITTO DENKO CORPORATION
    Inventors: Markondeya Raj Pulugurtha, Yoshihiro Furukawa, Himani Sharma, Keiji Takemura, Rao R. Tummala, Teng Sun
  • Publication number: 20210036095
    Abstract: An exemplary embodiment of the present invention provides a planar inductor including a substrate, a first magnetic layer, a conductive coil, and a second magnetic layer. The first magnetic layer can be disposed on at least a portion of the substrate. The conductive coil can be disposed on a first portion of the first magnetic layer. The second magnetic layer can be disposed on a second portion of the first magnetic layer and on at least a portion of the conductive coil.
    Type: Application
    Filed: November 16, 2017
    Publication date: February 4, 2021
    Applicants: Georgia Tech Research Corporation, NITTO DENKO CORPORATION
    Inventors: Markondeya Raj PULUGURTHA, Yoshihiro FURUKAWA, Himani SHARMA, Keiji TAKEMURA, Rao R. TUMMALA, Teng SUN
  • Publication number: 20140347157
    Abstract: Exemplary embodiments provide a nanomagnetic structure and method of making the same, comprising a device substrate, a plurality of nanomagnetic composite layers disposed on the device substrate, wherein an adhesive layer is interposed between each of the plurality of nanomagnetic composite layers. Metal windings are integrated within the plurality of nanomagnetic composite layers to form an inductor core, wherein the nanomagnetic structure has a thickness ranging from about 5 to about 100 microns.
    Type: Application
    Filed: August 16, 2012
    Publication date: November 27, 2014
    Inventors: Markondeya Raj Pulugurtha, Rao R. Tummala, Venkatesh Sundaram, Nitesh Kumbhat, Uppili Sridhar, Joseph Ellul, Dibyajat Mishra
  • Publication number: 20140145328
    Abstract: The various embodiments of the present invention provide fine pitch, chip-to-substrate hybrid interconnect assemblies, as well as methods of making and using the assemblies. The hybrid assemblies generally include a semiconductor having a die pad disposed thereon, a substrate having a substrate pad disposed thereon, and a polymer layer disposed between the surface of the die pad and the surface of the substrate pad. In addition, at least a portion of the surface of the die pad is metallically bonded to at least a portion of the surface of the substrate pad and at least a portion of the surface of the die pad is chemically bonded to at least a portion of the surface of the substrate pad.
    Type: Application
    Filed: January 21, 2014
    Publication date: May 29, 2014
    Applicant: Georgia Tech Research Corporation
    Inventors: Rao Tummala, Venkatesh Sundaram, Markondeya Raj Pulugurtha, Tao Wang, Vanessa Smet
  • Patent number: 8174017
    Abstract: Disclosed are three-dimensional dielectric structures on high surface area electrodes and fabrication methods. Exemplary structures comprise a copper foil substrate, trench electrodes or high surface area porous electrode structures formed on the substrate, a insulating thin film formed on the surface and laminating the foil on a organic substrate. A variety of materials may be used to make the films including perovksite ceramics such as barium titanate, strontium titanate, barium strontium titanate (BST), lead zirconate titanate (PZT); other intermediate dielectric constant films such as zinc oxide, aluminum nitride, silicon nitride; typical paraelectrics such as tantalum oxide, alumina, and titania. The films may be fabricated using sol-gel, hydrothermal synthesis, anodization or vapor deposition techniques.
    Type: Grant
    Filed: August 16, 2006
    Date of Patent: May 8, 2012
    Assignee: Georgia Tech Research Corporation
    Inventors: Markondeya Raj Pulugurtha, Devarajan Balaraman, Isaac R. Abothu, Rao Tummala, Farrokh Ayazi
  • Patent number: 7977758
    Abstract: Disclosed are ferroelectric and ferromagnetic noise isolation structures that reduce electromagnetic interference and noise in integrated circuit devices and system architectures. Representative structures comprise two or more devices that are vertically disposed relative to one another, and a thin ferroelectric or ferromagnetic film layer disposed between the respective devices that isolates electromagnetic energy coupling from one device to another.
    Type: Grant
    Filed: June 20, 2008
    Date of Patent: July 12, 2011
    Assignee: Georgia Tech Research Corporation
    Inventors: Markondeya Raj Pulugurtha, Madhaven Swaminathan, Mahadevan Krishna Iyer, Rao Tummala, Isaac Robin Abothu, Jin Hyun Hwang
  • Publication number: 20100103639
    Abstract: Disclosed are ferroelectric and ferromagnetic noise isolation structures that reduce electromagnetic interference and noise in integrated circuit devices and system architectures. Representative structures comprise two or more devices that are vertically disposed relative to one another, and a thin ferroelectric or ferromagnetic film layer disposed between the respective devices that isolates electromagnetic energy coupling from one device to another.
    Type: Application
    Filed: June 20, 2008
    Publication date: April 29, 2010
    Inventors: Markondeya Raj Pulugurtha, Jin Hyun Hwang, Isaac Robin Abothu, Mahadevan Krishna Iyer, Rao Tummala, Madhavan Swaminathan