Abstract: A semiconductor device includes a semiconductor substrate, a power semiconductor device monolithically formed in the semiconductor substrate, and an electrical interconnect region formed on an upper surface of the semiconductor substrate. The semiconductor device includes an upper-level contact pad formed in an uppermost level of metallization from the electrical interconnect region, wherein a plurality of external contact structures is formed on the upper-level contact pad. Additionally, the semiconductor device includes a hybrid via-metallization structure pad formed in a lower part of an interconnect region and forming a via structure with a terminal of the power semiconductor device and an interconnect metallization.

Abstract: In an embodiment, a semiconductor device is provided that includes a semiconductor substrate having a first major surface and a metallization structure located on the first major surface. The metallization structure includes one or more electrically conductive structures having a metallic diffusion barrier layer and a copper layer located on the metallic diffusion barrier layer. The metallic diffusion barrier layer has a thickness t, an upper surface, a lower surface, and a side face extending between an upper edge formed between the upper surface and the side face and a lower edge formed between the lower surface and the side face. The linear distance d between the upper edge and the lower edge is t?d?1.1 t or t?d?1.05 t.

Abstract: The invention relates to a device comprising a beam splitter and a method of using the device. The device comprises a beam emitting unit and a downstream beam splitter, which is formed by two adjacent planar plates of different materials. For a specified wavelength range of an optical beam from which a partial beam is to be coupled out by reflection, the material of the first planar plate has a minimum refractive index which is greater by a refractive index interval than the maximum ref ractive index of the material of the second planar plate. From the optical beam, which, collimated and linearly polarized parallel to a plane of incidence, impinges on the beam splitter at a certain angle of incidence, the partial beam having only a small summary percentage of the optical beam and a small spectral fluctuation range is coupled out.

Abstract: The invention relates to a device comprising a beam splitter and a method of using the device. The device comprises a beam emitting unit and a downstream beam splitter, which is formed by two adjacent planar plates of different materials. For a specified wavelength range of an optical beam from which a partial beam is to be coupled out by reflection, the material of the first planar plate has a minimum refractive index which is greater by a refractive index interval than the maximum refractive index of the material of the second planar plate. From the optical beam, which, collimated and linearly polarized parallel to a plane of incidence, impinges on the beam splitter at a certain angle of incidence, the partial beam having only a small summary percentage of the optical beam and a small spectral fluctuation range is coupled out.

Abstract: The invention relates to a method for producing a wavefront-corrected optical arrangement comprising at least two optical elements. Using the method, a total wavefront error in the optical arrangement is determined and compared to a permissible tolerance range for the total wavefront error. To perform the method, the optical elements are individualized by assigning an individual identifier to each of them, such that individualized optical elements are obtained, individual surface defects are measured with correct coordinates on all the individualized optical elements and the measured individual surface defects are stored with correct coordinates assigned to the appropriate individualized optical element. The optical arrangement comprising the individualized optical elements is produced virtually as a virtual optical arrangement and a total wavefront error is calculated for the virtual optical arrangement.

Abstract: The invention relates to a method for producing a wavefront-corrected optical arrangement comprising at least two optical elements. Using the method, a total wavefront error in the optical arrangement is determined and compared to a permissible tolerance range for the total wavefront error. To perform the method, the optical elements are individualized by assigning an individual identifier to each of them, such that individualized optical elements are obtained, individual surface defects are measured with correct coordinates on all the individualized optical elements and the measured individual surface defects are stored with correct coordinates assigned to the appropriate individualized optical element. The optical arrangement comprising the individualized optical elements is produced virtually as a virtual optical arrangement and a total wavefront error is calculated for the virtual optical arrangement.

Abstract: The invention relates to an exposure device (14) for the structured exposure of a wafer, having at least one exposure arrangement with which a beam that is separated into two sub-beams is modulated via two micromirror arrays in order to increase the throughput speed during the exposure of wafers.

Abstract: The invention relates to an exposure device (14) for the structured exposure of a wafer, having at least one exposure arrangement with which a beam that is separated into two sub-beams is modulated via two micromirror arrays in order to increase the throughput speed during the exposure of wafers.