Abstract: A wash system for window glasses and/or headlamps of a vehicle, with a fluid line through which a fluid is conducted from a fluid reservoir into a nozzle and with a heating cable which is laid in the fluid line is disclosed. The heating cable is laid so as to enter the nozzle or to pass through the nozzle and to heat not only the fluid line but also the nozzle. One obtains a wash system that can be manufactured at low cost and ensures freeze protection at reduced energy expense by the fact that the heating cable is laid in a meander pattern in the nozzle.

Abstract: A wash system for window glasses and/or headlamps of a vehicle, with a fluid line through which a fluid is conducted from a fluid reservoir into a nozzle and with a heating cable which is laid in the fluid line is disclosed. The heating cable is laid so as to enter the nozzle or to pass through the nozzle and to heat not only the fluid line but also the nozzle. One obtains a wash system that can be manufactured at low cost and ensures freeze protection at reduced energy expense by the fact that the heating cable is laid in a meander pattern in the nozzle.

Abstract: A fluid supply hose for a windscreen or headlamp washer system of a vehicle having an electric heating element, said heating element comprising a coaxial cable (2, 12) with an inner current conductor (3, 13) and an outer current conductor (5, 15) surrounding said inner conductor (3, 13), an insulator (4, 14) being provided between said inner (3, 13) and said outer conductor (5, 15). To provide a fluid supply hose of the type mentioned herein above the heating element of which is of a small and flow-enhancing design so that the fluid supply hose may have a smaller cross section, the inner current conductor (3, 13) is given a higher electric resistance than the outer current conductor (5, 15).

Abstract: A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of the substrate. The substrate is annealed for a first given time to drive the dopants from the first and second dopants sources into the substrate. The first and second dopant sources are removed from the upper and lower surfaces of the substrate. The substrate is annealed for a second given time to homogenize dopant concentration within the substrate after the first and second dopant sources have been removed, where the annealing the substrate for the second given time results in out-diffusion of dopants proximate the upper and lower surfaces of the substrate.

Abstract: A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of the substrate. The substrate is annealed for a first given time to drive the dopants from the first and second dopants sources into the substrate. The first and second dopant sources are removed from the upper and lower surfaces of the substrate. The substrate is annealed for a second given time to homogenize dopant concentration within the substrate after the first and second dopant sources have been removed, where the annealing the substrate for the second given time results in out-diffusion of dopants proximate the upper and lower surfaces of the substrate.