Abstract: The present invention relates to the use of transition metal-carbene complexes in organic light-emitting diodes (OLEDs), to a light-emitting layer, to a blocking layer for electrons or excitons, or to a blocking layer for holes, each comprising these transition metal-carbene complexes, to OLEDs comprising these transition metal-carbene complexes, to devices which comprise an inventive OLED, and to transition metal-carbene complexes.

Abstract: The present invention relates to the use of polymeric materials comprising at least one transition metal-carbene complex in organic light-emitting diodes (OLEDs), polymeric materials comprising at least one selected transition metal-carbene complex, a process for preparing the polymeric materials of the invention, a light-emitting layer comprising at least one polymeric material used according to the invention or at least one polymeric material of the invention, an organic light-emitting diode (OLED) comprising the light-emitting layer of the invention and devices comprising the organic light-emitting diode of the invention.

Abstract: Process for preparing tris-ortho-metallated iridium complexes of the formula (I) where R1, R2, R3, R4, R5, R6 and X have the meanings given in the description, Ir complexes which can be prepared by the process of the invention, the use of the Ir complexes as emitter molecule in organic light-emitting diodes (OLEDs), a light-emitting layer comprising the Ir complexes, an OLED comprising this light-emitting layer and an apparatus comprising an OLED according to the present invention.

Abstract: The invention relates to a process for vapor deposition of one or more compounds onto a support, in which (i) the compound is introduced in a solid or gaseous state into a carrier gas stream, (ii) the compound is present in a gaseous state in the carrier gas stream, (iii) the gaseous compound is precipitated, (iv) the compound precipitated in step (iii) is once again brought into the gaseous state, and (v) the gaseous compound is subsequently precipitated on the support, wherein the carrier gas stream comprising the gaseous compound(s) is cooled to a temperature below the sublimation temperature of the compound(s) by introduction of a gas stream.

Abstract: Use of transition metal complexes of the formula (I) in organic light-emitting diodes where: M1 is a metal atom; carbene is a carbene ligand; L is a monoanionic or dianionic ligand; K is an uncharged monodentate or bidentate ligand selected from the group consisting of phosphines; CO; pyridines; nitrites and conjugated dienes which form a ? complex with M1; n is the number of carbene ligands and is at least 1; m is the number of ligands L, where m can be 0 or ?1; o is the number of ligands K, where o can be 0 or ?1; where the sum n+m+o is dependent on the oxidation state and coordination number of the metal atom and on the denticity of the ligands carbene, L and K and also on the charge on the ligands carbene and L, with the proviso that n is at least 1, and also an OLED comprising these transition metal complexes, a light-emitting layer comprising these transition metal complexes, OLEDs comprising this light-emitting layer, devices comprising an OLED according to the present invention, and specific t