Abstract: A method and apparatus for processing a surface of a substrate with a cluster apparatus including a transport chamber and two or more process reactors connected to the transport chamber. The method further includes subjecting the surface of the substrate to a surface preparation step for providing a prepared substrate surface, providing an interface layer on the prepared substrate surface of the substrate for forming an interfaced substrate surface, and providing a functional layer on the interfaced substrate surface of the substrate. The process steps are carried out in at least two different process reactors connected to transport chamber the substrate is transported between the at least two process reactors via the transport chamber under vacuum atmosphere.

Abstract: A reaction chamber, apparatus and method for atomic layer deposition. The reaction chamber includes a gas inlet, a gas outlet arranged spaced apart from the gas inlet, and two or more substrate racks. Each of the substrate racks is arranged to support two or more separate substrates such that a substrate batch is formed. The two or more substrate racks are arranged inside the reaction space of the reaction chamber between the gas inlet and the gas outlet, and the two or more substrate racks are arranged in a row assembly between the gas inlet and the gas outlet.

Abstract: An atomic layer deposition apparatus arranged to process multiple substrates concurrently in a batch process and a method for loading a substrate batch. The apparatus includes a loading chamber connected to the vacuum chamber through a loading connection; a loading arrangement arranged to move a substrate batch (B) between the loading chamber and the reaction chamber inside the vacuum chamber through the loading connection; and the reaction chamber including a support part forming a reactor bottom; and a cover part forming reactor side walls and a reactor roof. The cover part is movably arranged with respect to the support part between an open position of the reaction chamber and a closed position of the reaction chamber.

Abstract: An atomic layer deposition reaction chamber and a reactor. The reaction chamber includes a first end, a second end, and a longitudinal central axis (X) between the first and second ends and a length (L) in the direction of the longitudinal central axis (X), and a first side wall and a second side wall defining width (W) of the reaction chamber, and a width central axis (Y) extending perpendicularly to the longitudinal central axis (X). The reaction chamber has along the longitudinal central axis (X) an increasing width (W) from the first end towards the width central axis (Y) and a decreasing width (W) from the width central axis (Y) towards the second end.

Abstract: An atomic layer deposition apparatus arranged to process multiple substrates concurrently in a batch process, the atomic layer deposition apparatus having a vacuum chamber, and a reaction chamber arranged inside the vacuum chamber. The reaction chamber includes a support part for supporting a substrate rack provided inside the reaction chamber, and a cover part for forming a housing surrounding the substrate rack provided at the support part. The atomic layer deposition apparatus further includes a conductive heater arranged to the reaction chamber; the conductive heater is arranged to provide thermal energy to substrates provided in the substrate rack inside the reaction chamber. The invention also relates to an arrangement having a substrate rack inside the reaction chamber.

Abstract: A method and apparatus for processing a surface of a substrate with a cluster apparatus including a transport chamber and two or more process reactors connected to the transport chamber. The method further includes subjecting the surface of the substrate to a surface preparation step for providing a prepared substrate surface, providing an interface layer on the prepared substrate surface of the substrate for forming an interfaced substrate surface, and providing a functional layer on the interfaced substrate surface of the substrate. The process steps are carried out in at least two different process reactors connected to transport chamber the substrate is transported between the at least two process reactors via the transport chamber under vacuum atmosphere.

Abstract: An apparatus and method for processing particulate matter by exposing the particulate matter to successive surface reactions of at least a first and a second gaseous precursor according to the principles of atomic layer deposition. The apparatus includes a vacuum chamber, a reaction chamber for particulate matter, wherein the reaction chamber is provided inside the vacuum chamber, a vibration mechanism for vibrating particulate matter inside the reaction chamber; and a precursor system arranged to supply the at least first and second gaseous precursors through the reaction chamber for subjecting the particulate matter to the at least first and second gaseous precursors. The method includes the steps of supplying the at least first and second gaseous precursors through the reaction chamber for subjecting the particulate matter to the at least first and second gaseous precursors, and vibrating particulate matter inside the reaction chamber.

Abstract: An apparatus and method for processing particulate matter by exposing the particulate matter to successive surface reactions of at least a first and a second gaseous precursor according to the principles of atomic layer deposition. The apparatus includes a vacuum chamber, a reaction chamber for particulate matter, wherein the reaction chamber is provided inside the vacuum chamber, a vibration mechanism for vibrating particulate matter inside the reaction chamber; and a precursor system arranged to supply the at least first and second gaseous precursors through the reaction chamber for subjecting the particulate matter to the at least first and second gaseous precursors. The method includes the steps of supplying the at least first and second gaseous precursors through the reaction chamber for subjecting the particulate matter to the at least first and second gaseous precursors, and vibrating particulate matter inside the reaction chamber.

Abstract: An apparatus for subjecting a surface of a substrate to successive surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition includes a reaction chamber defining a reaction space, one or more gas inlets, one or more gas outlets and a plasma discharge electrode. The apparatus further includes an grounded grid sheet having openings and arranged within the reaction space opposite the plasma discharge electrode.