Abstract: A radiation-emitting semiconductor body having a semiconductor layer sequence includes an active region that generates radiation, an n-conducting region and a p-conducting region, wherein the active region is located between the n-conducting region and the p-conducting region, the p-conducting region includes a current expansion layer based on a phosphide compound semiconductor material, and the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites.

Abstract: A method for producing a contact structure for an optoelectronic semiconductor component is given, comprising the steps: a) providing a growth substrate having a semiconductor body which is grown thereon and comprises a first and a second region, and an active region, b) creating at least one first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, c) inserting a first electrically conductive contact material into the first recess, d) fixing the semiconductor body with the side facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body, e) creating at least one second recess extending from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body, f) introducing a second electrically conductive contact material into the second recess in such a way that t

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.

Abstract: A method of producing laser bars or semiconductor lasers includes providing a carrier composite to form a plurality of carriers for the laser bars or for the semiconductor lasers, providing a semiconductor body composite including a common substrate and a common semiconductor layer sequence grown thereon, forming a plurality of separation trenches through the common semiconductor layer sequence such that the semiconductor body composite is divided into a plurality of semiconductor bodies, applying the semiconductor body composite to the carrier composite such that the separation trenches face the carrier composite, thinning or removing the common substrate, and singulating the carrier composite into a plurality of carriers, wherein a plurality of semiconductor bodies are arranged on one of the carriers, and the semiconductor bodies arranged on one common carrier are laterally spaced apart from one another by the separation trenches.

Abstract: A method for producing a contact structure for an optoelectronic semiconductor component is given, comprising the steps: a) providing a growth substrate having a semiconductor body which is grown thereon and comprises a first and a second region, and an active region, b) creating at least one first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, c) inserting a first electrically conductive contact material into the first recess, d) fixing the semiconductor body with the side facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body, e) creating at least one second recess extending from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body, f) introducing a second electrically conductive contact material into the second recess in such a way that t

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.

Abstract: A method of producing laser bars or semiconductor lasers includes providing a carrier composite to form a plurality of carriers for the laser bars or for the semiconductor lasers, providing a semiconductor body composite including a common substrate and a common semiconductor layer sequence grown thereon, forming a plurality of separation trenches through the common semiconductor layer sequence such that the semiconductor body composite is divided into a plurality of semiconductor bodies, applying the semiconductor body composite to the carrier composite such that the separation trenches face the carrier composite, thinning or removing the common substrate, and singulating the carrier composite into a plurality of carriers, wherein a plurality of semiconductor bodies are arranged on one of the carriers, and the semiconductor bodies arranged on one common carrier are laterally spaced apart from one another by the separation trenches.

Abstract: A radiation-emitting semiconductor body having a semiconductor layer sequence includes an active region that generates radiation, an n-conducting region and a p-conducting region, wherein the active region is located between the n-conducting region and the p-conducting region, the p-conducting region includes a current expansion layer based on a phosphide compound semiconductor material, and the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites.

Abstract: An optoelectronic component is disclosed. In an embodiment the component includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first and second layer, wherein the active layer directly borders the first and second layer, a radiation surface directly bordering the second layer, one or more contact isles for electrically contacting the first layer and one or more through-connections for electrically contacting of the second layer, wherein the through-connections are formed through the first layer and the active layer and open into the second layer, wherein the contact isles are located laterally next to one another directly on a rear side of the first layer facing away from the radiation surface, wherein the through-connections are arranged in regions between the contact isles in a top view of the rear side.

Abstract: An optoelectronic component is disclosed. In an embodiment the component includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first and second layer, wherein the active layer directly borders the first and second layer, a radiation surface directly bordering the second layer, one or more contact isles for electrically contacting the first layer and one or more through-connections for electrically contacting of the second layer, wherein the through-connections are formed through the first layer and the active layer and open into the second layer, wherein the contact isles are located laterally next to one another directly on a rear side of the first layer facing away from the radiation surface, wherein the through-connections are arranged in regions between the contact isles in a top view of the rear side.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment, the chip includes a semiconductor layer sequence with a first side, a second side and an active zone and at least one via electrically contacting the first side with the second side through the active zone, wherein the via has a base region including a cylinder, a truncated cone or a truncated pyramid, wherein the via is surrounded in a lateral direction by an electric insulation layer, wherein the via has a contact region including a truncated cone, a truncated pyramid, or a spherical or aspherical body, wherein the contract region directly follows the base region, wherein the contact region is in direct contact with the second side, wherein a first flank angle of the base region is different from a second flank angle of the contact region, and wherein the first and second flank angles are related to the lateral direction.

Abstract: An optoelectronic device is disclosed. In an embodiment the device includes a semiconductor crystal with a surface having a first lateral region, a second lateral region and a third lateral region, a contact area arranged on the surface in the first lateral region, the contact area comprising a first metal and a first layer including a dielectric arranged on the surface in the third lateral region. The device further includes a second layer having an optically transparent, electrically conductive material arranged on the contact area, the first layer and the second lateral region of the surface and a third layer having a second metal arranged on the second layer.

Abstract: An optoelectronic device is disclosed. In an embodiment the device includes a semiconductor crystal with a surface having a first lateral region, a second lateral region and a third lateral region, a contact area arranged on the surface in the first lateral region, the contact area comprising a first metal and a first layer including a dielectric arranged on the surface in the third lateral region. The device further includes a second layer having an optically transparent, electrically conductive material arranged on the contact area, the first layer and the second lateral region of the surface and a third layer having a second metal arranged on the second layer.

Abstract: A method for producing an optoelectronic component is disclosed. A first layer which has a dielectric to the surface of a semiconductor crystal. A photoresist layer is applied and structured on the first layer. The photoresist layer is structured in such a way that the photoresist layer has an opening, The first layer is partially separated in order to expose a lateral region of the surface. A contact area having a first metal is applied in the lateral region of the surface. The photoresist layer is removed. A second layer, which comprises an optically transparent, electrically conductive material, and a third layer, which comprises a second metal, are applied.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates an electromagnetic radiation and a light exit side, and a light coupling-out layer applied to the light exit side, wherein the light coupling-out layer includes of radiation-inactive nanocrystals composed of a material transmissive to the radiation generated, and a refractive index of the radiation-transmissive material for the radiation is at least 1.9.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates an electromagnetic radiation and a light exit side, and a light coupling-out layer applied to the light exit side, wherein the light coupling-out layer includes of radiation-inactive nanocrystals composed of a material transmissive to the radiation generated, and a refractive index of the radiation-transmissive material for the radiation is at least 1.9.