Patents by Inventor Markus Chmielus

Markus Chmielus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200118742
    Abstract: A method for producing an MSMA, a magnetic material or a magnetic item via additive manufacturing, comprising: (a) providing or forming a layer of magnetic/ferromagnetic particles; (b) applying a magnetic field, having a first three-dimensional (“3D”) magnetic field vector with respect to an origin point of a 3D coordinate system, to the layer of particles or portion thereof, either while pressure is or is not applied to hold the particles in place, to align the magnetic moments of the magnetic particles in the layer or portion thereof during or after the providing or forming of the layer or portion thereof; (c) applying means for binding the layer wherein means for binding may comprise a binder material or complete/partial sintering of the layer; (d) providing or forming a next layer of magnetic/ferromagnetic particulate material on to the previous layer; (e) applying a magnetic field, having a next 3D magnetic field vector with respect to the origin point of the 3D coordinate system, to the next layer of pa
    Type: Application
    Filed: May 25, 2018
    Publication date: April 16, 2020
    Applicant: UNIVERSITY OF PITTSBURGH - OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
    Inventors: Markus Chmielus, Yuval Krimer, Amir Mostafaei, Erica Stevens, Jakub Toman
  • Patent number: 8586194
    Abstract: Magnetic materials and methods exhibit large magnetic-field-induced deformation/strain (MFIS) through the magnetic-field-induced motion of crystallographic interfaces. The preferred materials are porous, polycrystalline composite structures of nodes connected by struts wherein the struts may be monocrystalline or polycrystalline. The materials are preferably made from magnetic shape memory alloy, including polycrystalline Ni—Mn—Ga, formed into an open-pore foam, for example, by space-holder technique. Removal of constraints that interfere with MFIS has been accomplished by introducing pores with sizes similar to grains, resulting in MFIS values of 0.12% in polycrystalline Ni—Mn—Ga foams, close to the best commercial magnetostrictive materials. Further removal of constraints has been accomplished by introducing pores smaller than the grain size, dramatically increasing MFIS to 2.0-8.7%.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: November 19, 2013
    Assignees: Boise State University, Northwestern University
    Inventors: Peter Mullner, Markus Chmielus, Cassie Witherspoon, David C. Dunand, Xuexi Zhang, Yuttanant Boonyongmaneerat
  • Patent number: 7964290
    Abstract: A magnetic materials construct and a method to produce the construct are disclosed. The construct exhibits large magnetic-field-induced deformation through the magnetic-field-induced motion of crystallographic interfaces. The construct is a porous, polycrystalline composite structure of nodes connected by struts wherein the struts may be monocrystalline or polycrystalline. If the struts are polycrystalline, they have a “bamboo” microstructure wherein the grain boundaries traverse the entire width of the strut. The material from which the construct is made is preferably a magnetic shape memory alloy, including polycrystalline Ni—Mn—Ga. The construct is preferably an open-pore foam. The foam is preferably produced with a space-holder technique. Space holders may be dissolvable ceramics and salts including NaAlO2.
    Type: Grant
    Filed: September 2, 2008
    Date of Patent: June 21, 2011
    Assignees: Boise State University, Northwestern University
    Inventors: Peter Mullner, Markus Chmielus, David C. Dunand, Yuttanant Boonyongmaneerat
  • Publication number: 20110064965
    Abstract: Magnetic materials and methods exhibit large magnetic-field-induced deformation/strain (MFIS) through the magnetic-field-induced motion of crystallographic interfaces. The preferred materials are porous, polycrystalline composite structures of nodes connected by struts wherein the struts may be monocrystalline or polycrystalline. The materials are preferably made from magnetic shape memory alloy, including polycrystalline Ni—Mn—Ga, formed into an open-pore foam, for example, by space-holder technique. Removal of constraints that interfere with MFIS has been accomplished by introducing pores with sizes similar to grains, resulting in MFIS values of 0.12% in polycrystalline Ni—Mn—Ga foams, close to the best commercial magnetostrictive materials. Further removal of constraints has been accomplished by introducing pores smaller than the grain size, dramatically increasing MFIS to 2.0-8.7%.
    Type: Application
    Filed: July 20, 2010
    Publication date: March 17, 2011
    Applicant: BOISE STATE UNIVERSITY
    Inventors: Peter Mullner, Markus Chmielus, Cassie Witherspoon, David C. Dunand, Xuexi Zhang, Yuttanant Boonyongmaneerat
  • Publication number: 20090092817
    Abstract: A magnetic materials construct and a method to produce the construct are disclosed. The construct exhibits large magnetic-field-induced deformation through the magnetic-field-induced motion of crystallographic interfaces. The construct is a porous, polycrystalline composite structure of nodes connected by struts wherein the struts may be monocrystalline or polycrystalline. If the struts are polycrystalline, they have a “bamboo” microstructure wherein the grain boundaries traverse the entire width of the strut. The material from which the construct is made is preferably a magnetic shape memory alloy, including polycrystalline Ni—Mn—Ga. The construct is preferably an open-pore foam. The foam is preferably produced with a space-holder technique. Space holders may be dissolvable ceramics and salts including NaAlO2.
    Type: Application
    Filed: September 2, 2008
    Publication date: April 9, 2009
    Applicants: BOISE STATE UNIVERSITY, NORTHWESTERN UNIVERSITY
    Inventors: PETER MULLNER, MARKUS CHMIELUS, DAVID C. DUNAND, YUTTANANT BOONYONGMANEERAT