Abstract: A power semiconductor module has a substrate, a power semiconductor, a connecting device, a potting body, a pressure device, external terminal elements and a housing, the substrate has an insulant body and substrate conductor tracks, wherein the power semiconductor component is arranged on one of the substrate conductor tracks and electrically connected thereto. The connecting device is a film stack having a first electrically conductive film, a second electrically conductive film, an electrically insulating film therebetween, the connecting device is covered by the potting body, the pressure device exerts pressure on the potting body with a spring, the external terminal elements are arranged on the preformed housing or connected in a positively locking manner and have a contact device to an assigned substrate conductor track.

Abstract: A power semiconductor module having a substrate, with a power semiconductor component, a connecting device, external terminal elements, a potting body and a pressure device, wherein the substrate has an insulant body and substrate conductor tracks, and the power semiconductor component is on a substrate conductor track, the connecting device is embodied as a film stack having a first electrically conductive film, a second electrically conductive film and an electrically insulating film arranged therebetween, wherein the external terminal elements each have a contact device for a substrate conductor track. The potting body completely covers the entire connecting device, envelops the substrate, and the external terminal elements apart from contact portions, and the pressure device exerts pressure on the potting body directly with a spring.

Abstract: A production method and a power electronic connecting device for a power semiconductor module, wherein the connecting device is designed as a flexible film stack of a first and a second electrically conductive film and an electrically insulating film arranged therebetween, wherein at least one of the electrically conductive films is structured in itself and thus forms a plurality of film conductor tracks, wherein a first one of these film conductor tracks has, in a first section, a first average thickness and, in a second section, a second average thickness which is at least 10%, preferably at least 20%, smaller than the first average thickness.

Abstract: A production method and a power electronic connecting device for a power semiconductor module, wherein the connecting device is designed as a flexible film stack of a first and a second electrically conductive film and an electrically insulating film arranged therebetween, wherein at least one of the electrically conductive films is structured in itself and thus forms a plurality of film conductor tracks, wherein a first one of these film conductor tracks has, in a first section, a first average thickness and, in a second section, a second average thickness which is at least 10%, preferably at least 20%, smaller than the first average thickness.

Abstract: A power electronic circuit device has a substrate, with multiple conductive tracks, and a power semiconductor component on these conductive tracks has a connection device with a metal sheet which electrically connects a contact pad of the power semiconductor component to a contact pad of a further power semiconductor component or a conductive track, and has a pressure device. The connection device includes a contact section for connection to an assigned contact pad and a connecting section arranged between the two contact sections. The pressure device includes a two-dimensional resilient pressure element that comprises pressure element sections, and first pressure element sections press with a first pressure surface section onto a contact section and second pressure element section presses with a second pressure surface section press onto the connecting section.