Abstract: A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plurality of process gas inlet zones. An etching gas inlet in the flow direction of the hydride and the MO compound opens into the process chamber downstream of the process gas inlet zones. A control device is adapted and the process gas inlet zones and the etching gas inlet are arranged such that the process gases cannot enter into the etching gas inlet during deposition of the semiconductor layer and the etching gas cannot enter into the process gas inlet zones during purification of the process chamber. The etching gas inlet is formed by an annular zone of the process chamber cover around the gas inlet element and by an annular fastening element for fastening a cover plate.

Abstract: A CVD reactor includes a gas inlet element for introducing a process gas into a process chamber arranged between a process chamber cover and a susceptor. The gas inlet element contains at least one metal surface that comes into contact with the process gas. The metal surface has a passivation layer which prevents the metal surface from flaking due to exposure to one or more reactive gases. Cooling channels are arranged such that the passivation layer is maximally heated to 100° C. in a cleaning step in which chlorine is introduced into the process chamber and the susceptor is heated to at least 700° C. At the same time, the passivation layer is formed by chemically reacting a metal-organic compound with the metal atoms of the metal surface. The cleaning gas inlet openings are arranged such that the cleaning gas comes into contact with the metal surface that has the passivation layer.

Abstract: A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plurality of process gas inlet zones. An etching gas inlet in the flow direction of the hydride and the MO compound opens into the process chamber downstream of the process gas inlet zones. A control device is adapted and the process gas inlet zones and the etching gas inlet are arranged such that the process gases cannot enter into the etching gas inlet during deposition of the semiconductor layer and the etching gas cannot enter into the process gas inlet zones during purification of the process chamber. The etching gas inlet is formed by an annular zone of the process chamber cover around the gas inlet element and by an annular fastening element for fastening a cover plate.

Abstract: A CVD reactor includes a gas inlet element for introducing a process gas into a process chamber arranged between a process chamber cover and a susceptor. The gas inlet element contains at least one metal surface that comes into contact with the process gas. The metal surface has a passivation layer which prevents the metal surface from flaking due to exposure to one or more reactive gases. Cooling channels are arranged such that the passivation layer is maximally heated to 100° C. in a cleaning step in which chlorine is introduced into the process chamber and the susceptor is heated to at least 700° C. At the same time, the passivation layer is formed by chemically reacting a metal-organic compound with the metal atoms of the metal surface. The cleaning gas inlet openings are arranged such that the cleaning gas comes into contact with the metal surface that has the passivation layer.

Abstract: A first and second process gas is fed into a device during a first and second process step, respectively. The device has an exhaust gas line through which a first and second exhaust gas is conveyed out of the device in the first and second process step, respectively. A first and second exhaust gas device is connected by means of a valve arrangement optionally to the exhaust gas line in a fluidly communicable and separable manner, with a first and second treatment member for treating an exhaust gas produced in the first and second process step, respectively. A gas feed device is arranged between the valve arrangement and the respective treatment members. A control device is provided whose control variable is the pressure difference between the total pressure in the respective exhaust gas devices and is configured to minimize the pressure difference during switching of the valve arrangement.

Abstract: The invention relates to an apparatus for deposition of a III-V semiconductor layer comprising a process chamber (1), a susceptor (2) forming the base of the process chamber (1) for receiving one or more substrates to be coated, a heater (3) for heating the susceptor (2) to a process temperature and a gas inlet element (4) which comprises at least one first and one second process gas inlet zone (5, 6, 7), each for introducing process gases into the process chamber (1).

Abstract: The invention relates to a device into which process gases different from one another can be fed during process steps different from one another and having an exhaust gas line (5) through which the exhaust gases different from one another can be conveyed out of the reactor (3) in process steps different from one another, with a first and a second exhaust gas device (10, 20) that can be connected by means of a valve arrangement (11, 21) optionally to the exhaust gas line (5) in a fluidly communicable and separable manner, with a respective treatment member (18, 28) for treating an exhaust gas produced in process steps different from one another, with a gas feed device (12, 22) arranged between the valve arrangement (11, 21) and the respective treatment member (18, 28) for feeding in a first equalizing gas, with a respective pressure sensor (13, 23) for determining the total pressure (PF, PT) in the exhaust gas device (10, 20), a control device (9) being provided whose control variable is the pressure differenc