Abstract: A semiconductor device includes a semiconductor body having opposite first and second surfaces, a gate region, and an active region arranged adjacent to the gate region in a horizontal direction. A first emitter, a first base, and a second base are arranged consecutively between the second and first surfaces in a vertical direction. A front-facing emitter is arranged in the active region and extends in the vertical direction from the first surface to the second base. Short-circuit regions extend from the first surface through the front-facing emitter to the second base. The active region has, in the horizontal direction, a first edge region adjacent to the gate region, a failure region adjacent to the first edge region, and a second edge region adjacent to the failure region. An average density of the short-circuit regions in the failure region is lower than in both edge regions.

Abstract: A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.

Abstract: A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.

Abstract: A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.

Abstract: A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.