Abstract: A sensor for parallel measurement of pressure and acceleration of a vehicle, including a substrate, a sensor element disposed on the substrate, a material being connected with the sensor element and being exposed to the environment of the sensor, wherein the material is configured to act as a seismic mass, and an electronic circuitry connected with the sensor element and including a first filter and a second filter, wherein the first and second filters have different filter characteristics so that an output of the first filter is representative for the pressure and an output of the second is representative for the acceleration.

Abstract: An embodiment of a silicon controlled rectifier (SCR) includes a semiconductor body, an active device region, and a device isolation region configured to electrically insulate the active device region from neighboring active device regions. First SCR regions and a second SCR region of a first conductivity type are in the active device region. A first pn-junction or Schottky junction is formed at an interface between the first SCR regions and the second SCR region. A first plurality of the first SCR regions and sub-regions of the second SCR region are alternately arranged and directly adjoin one another. A second pn-junction is formed at an interface between the second SCR region and a third SCR region of a second conductivity type. A third pn-junction is formed at an interface between the third SCR region and a fourth SCR region of the first conductivity type.

Abstract: A pressure sensor is provided. The pressure sensor includes a magnetic sensor element configured to generate a signal based on a magnetic field sensed by the magnetic sensor element; a microelectromechanical system (MEMS) structure including a membrane configured to move, depending on a pressure applied thereto, relative to the magnetic sensor element; and a field influencing element configured to modify the magnetic field based on a movement of the membrane, wherein the field influencing element is arranged on the membrane.

Abstract: A pressure sensor is provided. The pressure sensor includes at least two electrodes and an integrated circuit configured to sense a capacitance between the at least two electrodes. Further, the pressure sensor includes a Microelectromechanical System (MEMS) structure including a conductive or dielectric membrane configured to move, depending on the pressure, relative to the at least two electrodes.

Abstract: An embodiment of a silicon controlled rectifier (SCR) includes a semiconductor body, an active device region, and a device isolation region configured to electrically insulate the active device region from neighboring active device regions. First SCR regions and a second SCR region of a first conductivity type are in the active device region. A first pn-junction or Schottky junction is formed at an interface between the first SCR regions and the second SCR region. A first plurality of the first SCR regions and sub-regions of the second SCR region are alternately arranged and directly adjoin one another. A second pn-junction is formed at an interface between the second SCR region and a third SCR region of a second conductivity type. A third pn-junction is formed at an interface between the third SCR region and a fourth SCR region of the first conductivity type.

Abstract: A chemically sensitive Hall device having a substrate; a chemically sensitive layer arranged on the substrate and configured to operably interact with atoms or molecules of a gaseous or liquid fluid; first electrodes connected to the chemically sensitive layer and configured to feed a sensor current through the chemically sensitive layer along a first direction; and second electrodes connected to the chemically sensitive layer and configured to tap a Hall voltage at the chemically sensitive layer along a second direction.

Abstract: A pressure sensor is provided. The pressure sensor includes at least two electrodes and an integrated circuit configured to sense a capacitance between the at least two electrodes. Further, the pressure sensor includes a Microelectromechanical System (MEMS) structure including a conductive or dielectric membrane configured to move, depending on the pressure, relative to the at least two electrodes.

Abstract: A chemically sensitive Hall device is described herein. In accordance with one example of the present invention, a Hall device comprises a substrate and a chemically sensitive layer arranged on the substrate. The chemically sensitive layer is able to interact with atoms or molecules of a gaseous or liquid fluid. Force electrodes are connected to the chemically sensitive layer for feeding a sensor current through the chemically sensitive layer along a first direction. Sense electrodes are connected to the chemically sensitive layer to tap a Hall voltage at the chemically sensitive layer along a second direction. A back gate is arranged on or integrated in the substrate and is isolated from the chemically sensitive layer by an isolation layer.

Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.

Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.

Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.

Abstract: A chemically sensitive Hall device is described herein. In accordance with one example of the present invention, a Hall device comprises a substrate and a chemically sensitive layer arranged on the substrate. The chemically sensitive layer is able to interact with atoms or molecules of a gaseous or liquid fluid. Force electrodes are connected to the chemically sensitive layer for feeding a sensor current through the chemically sensitive layer along a first direction. Sense electrodes are connected to the chemically sensitive layer to tap a Hall voltage at the chemically sensitive layer along a second direction. A back gate is arranged on or integrated in the substrate and is isolated from the chemically sensitive layer by an isolation layer.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.